{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF630NPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF630NPBF","canonicalUrl":"https://icboms.com/infineon/IRF630NPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF630NPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRF630NPBF, HEXFET® N-Channel MOSFET, 200 V drain-source, 9.3 A continuous drain current, 300 mOhm Rds(on) at 10 V gate drive, 35 nC gate charge, TO-220AB through-hole, -55°C to 175°C junction temperature.","salesMarkdown":"## Package and mounting The IRF630NPBF is an N-channel enhancement-mode MOSFET from the HEXFET series, built on a planar stripe DMOS process that gives it a 200 V drain-source breakdown and a continuous drain current rating of 9.3 A at 25°C case temperature. The 300 mOhm maximum on-resistance at Vgs=10 V and 5.4 A sets the conduction loss floor — at 5 A the dissipation runs about 7.5 W, which the TO-220AB package can handle with a modest heatsink before the junction hits 175°C. Gate charge totals 35 nC at 10 V, so a gate driver sourcing 1 A can switch the FET in about 35 ns — fast enough for a 100 kHz SMPS primary, but the 575 pF input capacitance at 25 V means the driver sees a capacitive load that needs a low-impedance loop back to the source pin. ## Thermal and switching — the numbers that decide the heatsink and the driver The 82 W maximum power dissipation at Tc=25°C is a case-temperature-limited figure — real-world dissipation at a 100°C case drops to about 35 W, which is where the TO-220 tab bolted to a finned heatsink earns its keep. Threshold voltage is 4 V maximum at 250 µA drain current, so a 5 V logic gate drive will barely turn it on — the datasheet specifies 10 V drive for the rated Rds(on), and anything below 8 V risks operating in the linear region with high dissipation. The ±20 V maximum gate-source rating gives headroom for gate-drive overshoot, but a 10 V drive is the sweet spot — driving to 15 V gains no Rds(on) improvement and eats into the margin on the gate oxide. ## Where the scorch mark tells you it failed — repair bench reality On a failed offline flyback supply, the IRF630NPBF typically dies shorted drain-to-source when the primary-side snubber or the reflected voltage exceeds 200 V — the scorch mark on the TO-220 tab is usually at the drain pin exit.","metaTitle":"IRF630NPBF N-Channel MOSFET, 200V 9.3A TO-220AB HEXFET","metaDescription":"IRF630NPBF N-channel HEXFET MOSFET, 200 Vdss, 9.3 A Id, 300 mOhm Rds(on) at 10 V. TO-220AB through-hole package. Active lifecycle, ROHS3.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"300mOhm @ 5.4A, 10V","Power Dissipation (Max)":"82W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"575 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.06","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.06000","currency":"USD"},{"qty":10,"price":"$0.94600","currency":"USD"},{"qty":100,"price":"$0.73740","currency":"USD"},{"qty":500,"price":"$0.60918","currency":"USD"},{"qty":1000,"price":"$0.48093","currency":"USD"},{"qty":2000,"price":"$0.44887","currency":"USD"},{"qty":5000,"price":"$0.42642","currency":"USD"},{"qty":10000,"price":"$0.41820","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/06e27348d099ec992543398e6f7a843a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF630NPBF at 10 V gate drive?","answer":"The maximum Rds(on) is 300 mOhm at Vgs=10 V and Id=5.4 A. This is the on-resistance that sets the conduction loss budget for the design — at 5 A the dissipation is about 7.5 W, so a heatsink is expected for continuous operation."},{"question":"What is the maximum drain current for IRF630NPBF?","answer":"The continuous drain current is 9.3 A at 25°C case temperature. Derate linearly above 25°C — at 100°C case temperature the usable current drops to roughly 6 A, limited by the junction temperature ceiling of 175°C."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF630NPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF630NPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}