{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF530NSTRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF530NSTRLPBF","canonicalUrl":"https://icboms.com/infineon/IRF530NSTRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF530NSTRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRF (Infineon) HEXFET N-Channel MOSFET, IRF530NSTRLPBF, 100 V Vdss, 17 A continuous drain, 90 mOhm Rds(on) at 10 V, D2PAK (TO-263), surface mount, -55°C to 175°C junction.","salesMarkdown":"The IRF530NSTRLPBF is an N-channel HEXFET MOSFET from Infineon, rated for a drain-to-source voltage of 100 V and a continuous drain current of 17 A at 25 °C case temperature. ## 175 °C junction — thermal headroom for tight enclosures The junction temperature rating of 175 °C provides thermal headroom for the D2PAK in confined airflow. The 70 W power dissipation at the case versus 3.8 W at ambient makes the board copper area under the tab the dominant thermal path. ## 37 nC gate charge — driver sizing for switching frequency With a total gate charge of 37 nC at 10 V, the gate-driver must supply 37 nC × fsw per switching cycle. At 100 kHz that is 3.7 mA average drive current — well within a standard MOSFET driver, but the peak current still needs to charge the 920 pF input capacitance fast enough to avoid Miller plateau dwell.","metaTitle":"IRF530NSTRLPBF N-Channel MOSFET, 100V 17A D2PAK","metaDescription":"IRF530NSTRLPBF N-channel HEXFET MOSFET, 100V, 17A, 90 mOhm Rds(on) at 10V, D2PAK, active production.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"90mOhm @ 9A, 10V","Power Dissipation (Max)":"3.8W (Ta), 70W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"37 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"920 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.49","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.26000","currency":"USD"},{"qty":10,"price":"$1.02900","currency":"USD"},{"qty":100,"price":"$0.80070","currency":"USD"},{"qty":800,"price":"$0.67868","currency":"USD"},{"qty":1600,"price":"$0.55285","currency":"USD"},{"qty":2400,"price":"$0.52044","currency":"USD"},{"qty":5600,"price":"$0.49566","currency":"USD"},{"qty":20000,"price":"$0.47278","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/34348ccc2fa16d1e409f711738eb0201.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF530NSTRLPBF?","answer":"Maximum on-resistance is 90 mOhm at 9 A drain current with 10 V gate drive. This is the conduction-loss figure for a switching or linear application at that bias point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF530NSTRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF530NSTRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}