{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF432","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF432","canonicalUrl":"https://icboms.com/infineon/IRF432","factsUrl":"https://icboms.com/api/mcp/products/IRF432","rawCanonicalId":null},"summary":{"shortDescription":"IRF432, N-Channel HEXFET Power MOSFET, 500 V drain-source voltage, 4 A continuous drain current, 75 W power dissipation, through-hole mounting, active production.","salesMarkdown":"## Package and mounting The IRF432 is an N-Channel HEXFET power MOSFET rated for a 500 V drain-source breakdown voltage and 4 A continuous drain current, with a 75 W power dissipation ceiling. The HEXFET structure is International Rectifier's original cellular-layout process, known for rugged avalanche energy handling — useful when a flyback or motor-drive snubber lets the drain ring above the rail. ## Sizing the heatsink and the load budget The 75 W dissipation limit is the absolute maximum at 25 °C case temperature. In a real 500 V switching application — say a 300 W off-line flyback primary — the switching losses at 50 kHz and conduction losses at the 4 A peak current will push junction temperature well above ambient. The through-hole package (likely a TO-3 or TO-247 tab-mount) expects a bolted heatsink; the thermal pad area under the mounting tab sets the RthJA, and without a heatsink the part derates sharply. The 4 A continuous rating is a DC limit. In a pulsed application like a motor-drive output stage, the pulsed drain current can be higher — but the average power must stay inside the 75 W boundary. The N-channel polarity means the load connects between the drain and the positive rail, with the source tied to ground through a low-side sense resistor or directly. No need to chase surplus stock or broker inventory.","metaTitle":"IRF432 N-Channel MOSFET, 500 V, 4 A, 75 W, Through Hole","metaDescription":"IRF432 N-Channel HEXFET power MOSFET rated 500 V, 4 A, 75 W. Active production, through-hole package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"power_w":"75.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"500.0","switching_current_a":"4.0"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.21","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/564bcb501e58dd45fefeaec5743d05c0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the IRF432 used for?","answer":"As a 500 V, 4 A N-channel HEXFET, the IRF432 is suited for high-voltage switching applications such as off-line power supplies, AC-DC converters, motor drives, and inverter stages where through-hole mounting and bolted heatsinking are acceptable."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF432","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF432 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}