{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF430","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF430","canonicalUrl":"https://icboms.com/infineon/IRF430","factsUrl":"https://icboms.com/api/mcp/products/IRF430","rawCanonicalId":null},"summary":{"shortDescription":"IRF430, N-Channel HEXFET® MOSFET, 500 V, 4.5 A, 1.8 Ohm Rds(on) at 10 V, 75 W, TO-220AB, Through Hole, -55°C to 150°C junction.","salesMarkdown":"## 500 V, 4.5 A switch — where it lands in the power stage The IRF430 is an N-channel enhancement-mode MOSFET from the HEXFET® series, rated for 500 V drain-source breakdown and 4.5 A continuous drain current. The 1.8 Ohm maximum on-resistance at Vgs = 10 V sets the conduction loss floor for a given load current — at 4.5 A the resistive loss is about 36 W, so the 75 W package power limit (TO-220AB through-hole) leaves thermal headroom only with adequate heatsinking. ## Gate drive and switching profile Gate threshold is 4 V maximum at 250 µA drain current, so a 10 V gate drive is needed to fully enhance the channel and hit the rated Rds(on). Total gate charge is 40 nC at Vgs = 10 V — a 1 A gate driver charges the gate in about 40 ns, which is fast enough for hard-switched converters in the 50–100 kHz range. The ±20 V maximum gate-source rating gives margin against ringing on the gate node in a typical half-bridge layout. ## Temperature range and package Junction temperature range is -55°C to 150°C, covering industrial and some automotive under-hood environments. The TO-220AB through-hole package is a standard power footprint with a metal tab for heatsink mounting — the drain tab is at drain potential, so an insulating pad or thermal compound is required for a grounded heatsink.","metaTitle":"IRF430 N-Channel HEXFET MOSFET, 500 V, 4.5 A, 1.8 Ohm","metaDescription":"IRF430 N-channel HEXFET MOSFET, 500 V, 4.5 A, 1.8 Ohm Rds(on). Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"75.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0006","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"500.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"4.5","Rds On (Max) @ Id, Vgs":"1.8Ohm @ 4.5 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"40 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.40","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/fwihtwml38/IRSDS03527-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[{"question":"What is the IRF430's gate threshold voltage?","answer":"Maximum gate threshold is 4 V at 250 µA drain current. A 10 V gate drive is needed to achieve the rated 1.8 Ohm on-resistance."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF430","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF430 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}