{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF40DM229","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF40DM229","canonicalUrl":"https://icboms.com/infineon/IRF40DM229","factsUrl":"https://icboms.com/api/mcp/products/IRF40DM229","rawCanonicalId":null},"summary":{"shortDescription":"Infineon StrongIRFET™ IRF40DM229 N-Channel MOSFET, 40 V, 159 A, 1.85 mOhm Rds(on) at 10 V, 161 nC Qg, DIRECTFET package, -55 to 150 °C junction.","salesMarkdown":"## 40 V, 1.85 mOhm — the conduction-loss floor The Infineon IRF40DM229 is an N-Channel StrongIRFET™ MOSFET rated at 40 V drain-source and 159 A continuous drain current. The headline figure is the 1.85 mOhm maximum on-resistance at 97 A, 10 V gate drive — this sets the conduction-loss floor for a high-current switching design. At 100 A, that is about 18.5 W of I²R loss before accounting for temperature derating. ## Gate charge and switching speed Total gate charge is 161 nC at Vgs = 10 V. For a 1 A gate driver, that translates to roughly 160 ns to charge the gate to the Miller plateau. The ±20 V maximum gate-source rating gives headroom for gate-drive overshoot in hard-switching topologies. ## Thermal and package reality Junction temperature range is -55 to 150 °C, covering industrial and automotive under-hood environments. The DIRECTFET package is a surface-mount can with a large exposed drain pad on the bottom — the thermal path runs through the PCB copper, so the board layout and via count directly set the effective RthJA. 83 W maximum power dissipation assumes an infinite heatsink; real-world derating depends on the board's ability to sink heat.","metaTitle":"IRF40DM229 N-Channel MOSFET, 40V 159A, 1.85 mOhm Rds(on)","metaDescription":"IRF40DM229 N-Channel StrongIRFET MOSFET, 40 V, 159 A, 1.85 mOhm Rds(on) at 10 V. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"StrongIRFET™","power_w":"83.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0053","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"3.9 V @ 100µA","switching_current_a":"159.0","Rds On (Max) @ Id, Vgs":"1.85mOhm @ 97 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"161 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.11","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/5f54b760c227809d1d309131abe2a6c1.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF40DM229","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF40DM229 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}