{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF3709ZPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF3709ZPBF","canonicalUrl":"https://icboms.com/infineon/IRF3709ZPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF3709ZPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET series, IRF3709ZPBF, N-Channel MOSFET, 30 V drain-source, 87 A switching current, 6.3 mOhm Rds(on) at 10 V, TO-220AB through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## 30 V, 87 A N-channel — the low-voltage workhorse The IRF3709ZPBF is an N-channel HEXFET power MOSFET from Infineon, rated at 30 V drain-source and 87 A switching current in a TO-220AB through-hole package. At 21 A drain current with 10 V on the gate, the IRF3709ZPBF guarantees a maximum on-resistance of 6.3 mOhm. That translates to about 2.8 W conduction loss at 21 A — well within the 79 W power dissipation rating of the TO-220 package when properly heatsunk. The low Rds(on) also means the part can handle pulsed currents well above the 87 A continuous rating without exceeding the junction temperature ceiling. ## Gate drive at 4.5 V — logic-level capable With a maximum gate charge of 26 nC at 4.5 V, this MOSFET can be driven directly from a 5 V microcontroller output or a 3.3 V logic gate without a separate driver IC. The threshold voltage is specified at 2.25 V max at 250 µA, so it turns on hard with a 5 V gate signal. This simplifies the BOM for battery-powered or low-voltage control circuits. ## Sourcing and lifecycle No official second source or direct replacement is listed in the family, so confirm pin-compatibility with any alternative before substituting.","metaTitle":"IRF3709ZPBF MOSFET N-CH 30V 87A TO220AB, 6.3 mOhm Rds(on)","metaDescription":"IRF3709ZPBF N-channel HEXFET MOSFET, 30V, 87A, TO220AB. Rds(on) 6.3 mOhm at 10V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","power_w":"79.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0021","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.25 V @ 250µA","switching_current_a":"87.0","Rds On (Max) @ Id, Vgs":"6.3mOhm @ 21 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"26 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.43","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/bbotzkqiw9/IRSDS09313-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF3709ZPBF?","answer":"The maximum on-resistance is 6.3 mOhm at a drain current of 21 A with 10 V gate-to-source drive."},{"question":"Is IRF3709ZPBF a logic-level MOSFET?","answer":"Yes — the maximum gate threshold voltage is 2.25 V at 250 µA, and the gate charge is specified at 4.5 V, so it can be driven directly from 5 V or 3.3 V logic without a separate gate driver."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF3709ZPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF3709ZPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}