{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF3415PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF3415PBF","canonicalUrl":"https://icboms.com/infineon/IRF3415PBF","factsUrl":"https://icboms.com/api/mcp/products/IRF3415PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRF3415PBF, N-Channel MOSFET, 150V Vdss, 43A Id, 42mOhm Rds(on) at 10V, 200 nC Qg, TO-220AB, -55°C to 175°C.","salesMarkdown":"## 150V, 43A N-channel — what the ratings tell you The 200 nC total gate charge at 10 V tells you this is not a light-switching FET — it needs a gate driver capable of sourcing several amperes peak to keep the switching edges clean and avoid spending too much time in the linear region. Pair it with a driver rated for at least 2 A peak output. ## Gate drive and switching — sizing the driver Gate drive voltage is specified at 10 V for the rated Rds(on); the maximum gate-source rating is ±20 V, so a 12 V or 15 V gate rail is safe but stay below the absolute maximum. Input capacitance Ciss is 2400 pF typical at 25 V drain-source — a moderate value that does not force a pre-driver stage but does demand a low-impedance gate loop. Keep the gate-driver output to the gate pin under 2 cm of PCB trace to minimise ringing at the Miller plateau. ## Thermal and temperature range — harsh-environment ready Maximum power dissipation is 200 W at case temperature 25°C — derate aggressively above 100°C case; the TO-220AB package with a proper heatsink is mandatory for any continuous current above 20 A.","metaTitle":"IRF3415PBF HEXFET N-Channel MOSFET, 150V, 43A, TO-220AB","metaDescription":"IRF3415PBF N-channel HEXFET MOSFET, 150V Vdss, 43A continuous drain, 42mOhm Rds(on) at 10V. TO-220AB. Active production.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"42mOhm @ 22A, 10V","Power Dissipation (Max)":"200W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"200 nC @ 10 V","Drain to Source Voltage (Vdss)":"150 V","Input Capacitance (Ciss) (Max) @ Vds":"2400 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"43A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.14","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.44000","currency":"USD"},{"qty":10,"price":"$2.19300","currency":"USD"},{"qty":100,"price":"$1.76290","currency":"USD"},{"qty":500,"price":"$1.44836","currency":"USD"},{"qty":1000,"price":"$1.20698","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b4297ba8f7e68b30e3ceeefce60c0d95.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gate charge of IRF3415PBF?","answer":"Total gate charge is 200 nC maximum at 10 V gate-source voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF3415PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF3415PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}