{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF323","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF323","canonicalUrl":"https://icboms.com/infineon/IRF323","factsUrl":"https://icboms.com/api/mcp/products/IRF323","rawCanonicalId":null},"summary":{"shortDescription":"IRF323, N-Channel hermetic HEXFET MOSFET, 350 V drain-source voltage, 2.8 A continuous drain current, 50 W power dissipation, TO-3 through-hole package, active lifecycle.","salesMarkdown":"## Hermetic N-channel HEXFET in a TO-3 can The IRF323 is an N-channel hermetic MOS HEXFET designed for high-voltage switching in military, aerospace, and industrial power systems where the TO-3 package's metal can provides a sealed environment and a low-thermal-resistance path to the heatsink. Rated for 350 V drain-source and 2.8 A continuous drain current. ## 50 W power dissipation — the thermal budget anchor The 50 W power dissipation rating at 25 °C case temperature sets the maximum continuous loss the die can sustain before the junction exceeds the rated Tj. For a 2.8 A load at 350 V bus, the conduction loss (Id² × Rds(on)) must stay under this ceiling; a 1.5 A load at 50 % duty cycle leaves about 20 W margin for switching losses in a hard-switched converter. The TO-3 package's metal baseplate conducts heat directly to the chassis or heatsink — no plastic interface. The mounting screw torque and thermal compound application directly set the junction-to-case thermal resistance; a dry joint or under-torqued screw can cut the usable Pd by half. Active status does not guarantee infinite availability; the hermetic TO-3 market has consolidated over the years. Sourcing through independent distribution provides a secondary channel that can cover allocation gaps or end-of-life transitions when they eventually come.","metaTitle":"IRF323 N-Channel MOSFET, 350 V, 2.8 A, 50 W, TO-3","metaDescription":"IRF323 N-Channel hermetic HEXFET MOSFET, 350 V Vds, 2.8 A Id, 50 W Pd. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"power_w":"50.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"350.0","switching_current_a":"2.8"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.64","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/de38f4591b69973f791b94ed5c8597db.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the IRF323's Vds rating?","answer":"The IRF323 is rated for 350 V drain-source voltage. This makes it suitable for 250 VDC bus applications like offline flyback converters, three-phase rectifier rails, and motor-drive DC links with adequate derating margin."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF323","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF323 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}