{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF3205ZSTRRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF3205ZSTRRPBF","canonicalUrl":"https://icboms.com/infineon/IRF3205ZSTRRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF3205ZSTRRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, N-Channel MOSFET, Drain to Source Voltage: 55 V, Continuous Drain Current: 75A, Rds On (Max): 6.5mOhm @ 66A, 10V, D2PAK (TO-263), -55°C ~ 175°C.","salesMarkdown":"## Key ratings for the power rail Gate charge is 110 nC at 10 V, and input capacitance is 3450 pF at 25 V drain-source, which gives a reasonable switching figure for a 75 A device in a hard-switched converter or motor drive. Supplied in the D2PAK (TO-263-3) surface-mount package, the IRF3205ZSTRRPBF is a standard footprint for medium-power MOSFETs. Maximum power dissipation is 170 W at the case temperature, and the junction temperature range extends from -55°C to 175°C — wide enough for under-hood automotive or industrial environments where the ambient regularly exceeds 85°C. The D2PAK tab carries the drain current; ensure the PCB copper area and thermal vias are sized for the dissipation budget.","metaTitle":"IRF3205ZSTRRPBF N-Channel MOSFET, 55V 75A, 6.5mOhm","metaDescription":"Infineon IRF3205ZSTRRPBF HEXFET N-channel MOSFET, 55V Vdss, 75A Id, 6.5mOhm Rds(on) at 10V. D2PAK. Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"6.5mOhm @ 66A, 10V","Power Dissipation (Max)":"170W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"110 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"3450 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"75A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/29ea58d8339062eb210b8eedbefb9157.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF3205ZSTRRPBF/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for IRF3205ZSTRRPBF?","answer":"The evidence does not list an official Infineon successor order code. For a pin-compatible alternative, look for a current-production N-channel MOSFET in D2PAK with a 55 V Vdss, 75 A Id rating, and 6.5 mOhm or lower Rds(on) at 10 V gate drive. The IRF3205ZPBF is the same die in a different package (TO-220), not a direct SMD replacement."},{"question":"IRF3205ZSTRRPBF vs IRF3205ZPBF: what is the difference?","answer":"The IRF3205ZPBF is the same HEXFET die in a through-hole TO-220 package, while the IRF3205ZSTRRPBF is the surface-mount D2PAK (TO-263) variant. Electrical ratings are identical. Choose the D2PAK for SMD assembly; choose the TO-220 for through-hole or heatsink mounting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF3205ZSTRRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF3205ZSTRRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T15:11:30.067Z","lastPublished":"2026-07-16T15:11:30.067Z","indexable":true}}