{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF3205ZL","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF3205ZL","canonicalUrl":"https://icboms.com/infineon/IRF3205ZL","factsUrl":"https://icboms.com/api/mcp/products/IRF3205ZL","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRF3205ZL, HEXFET® N-Channel MOSFET, 55 V Vdss, 75 A Id, 6.5 mOhm Rds(on) at 10 V, 170 W, TO-262-3 (I²Pak), -55°C to 175°C.","salesMarkdown":"The IRF3205ZL is an Infineon HEXFET® N-channel power MOSFET in a through-hole TO-262 package (I²Pak, three long leads). The 170 W power dissipation ceiling and 175°C maximum junction temperature suit it for high-current switching in motor drives, DC-DC converters, and battery management systems where the board sees elevated ambient temperatures. ## Obsolete — sourcing reality for sustainment programs ## Gate charge and switching — 110 nC at 10 V With a typical gate charge of 110 nC at 10 V, the IRF3205ZL requires a gate driver capable of sourcing and sinking that charge quickly to achieve fast switching edges. For a 100 kHz converter, budget roughly 110 nC × 100 kHz = 11 mA average gate drive current; peak current depends on the driver's output resistance and the gate loop inductance.","metaTitle":"IRF3205ZL HEXFET N-Channel MOSFET, 55V 75A, TO-262","metaDescription":"IRF3205ZL N-channel HEXFET MOSFET, 55V Vdss, 75A Id, 6.5mOhm Rds(on) at 10V. TO-262 package, -55 to 175°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"6.5mOhm @ 66A, 10V","Power Dissipation (Max)":"170W (Tc)","Supplier Device Package":"TO-262","Gate Charge (Qg) (Max) @ Vgs":"110 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"3450 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"75A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/6e02e1adef9ca043e22fc22c8f776ef4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF3205ZL/alternatives.json"},"ai":{"faq":[{"question":"Is IRF3205ZL obsolete?","answer":"Yes, the IRF3205ZL is listed as Obsolete. Infineon no longer manufactures it."},{"question":"What is a replacement for IRF3205ZL?","answer":"A replacement would need to match the 55 V Vdss, 75 A Id, 6.5 mOhm Rds(on) at 10 V, and the TO-262 (I²Pak) footprint. Check parametric search tools for N-channel MOSFETs in the same package with equivalent or better ratings."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF3205ZL","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF3205ZL when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T14:32:53.577Z","lastPublished":"2026-07-16T14:32:53.577Z","indexable":true}}