{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF3205SPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF3205SPBF","canonicalUrl":"https://icboms.com/infineon/IRF3205SPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF3205SPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRF3205SPBF HEXFET® N-Channel MOSFET, 55 V Vdss, 110 A continuous drain, 8 mOhm max Rds(on) at 10 V gate drive, TO-263-3 D2PAK surface-mount package, -55°C to 175°C junction temperature.","salesMarkdown":"The Infineon IRF3205SPBF is a HEXFET® N-channel power MOSFET in a TO-263-3 (D2PAK) surface-mount package. It is designed for high-current switching applications where low on-resistance and high junction temperature tolerance are required. The 55 V drain-to-source voltage rating suits 12 V, 24 V, and 48 V bus architectures common in automotive, industrial, and power-supply designs. ## 8 mOhm on-resistance — conduction loss and gate-drive planning The drive voltage spec of 10 V for rated Rds(on) means the gate driver must supply at least 10 V to achieve the stated on-resistance; operating at lower gate voltages increases Rds(on) significantly. The total gate charge of 146 nC at 10 V defines the switching energy — a gate driver capable of sourcing and sinking that charge quickly is needed for efficient high-frequency switching. ## Package and thermal management for the TO-263 D2PAK The maximum power dissipation of 200 W at case temperature assumes adequate heatsinking — without a thermal via array and a large copper pour, the junction temperature will exceed the 175°C absolute maximum under sustained high current.","metaTitle":"IRF3205SPBF HEXFET N-Channel MOSFET, 55V, 110A, 8mOhm","metaDescription":"IRF3205SPBF HEXFET N-Channel MOSFET, 55V Vdss, 110A Id, 8mOhm Rds(on) at 10V. Active lifecycle, TO-263 D2PAK.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"8mOhm @ 62A, 10V","Power Dissipation (Max)":"200W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"146 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"3247 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"110A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.9700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ba843c377de42b3efc6ac76f1e7a6342.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF3205SPBF/alternatives.json"},"ai":{"faq":[{"question":"Is IRF3205SPBF obsolete?","answer":"No. There is no end-of-life or last-time-buy notice in effect."},{"question":"What is the equivalent of IRF3205SPBF?","answer":"Check the Infineon cross-reference tool for the latest alternatives."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF3205SPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF3205SPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}