{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF300P227","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF300P227","canonicalUrl":"https://icboms.com/infineon/IRF300P227","factsUrl":"https://icboms.com/api/mcp/products/IRF300P227","rawCanonicalId":null},"summary":{"shortDescription":"Infineon StrongIRFET™ IRF300P227, N-Channel MOSFET, 300 V Vdss, 50 A continuous drain, 40 mOhm Rds(on) at 10 V, 107 nC gate charge, TO-247-3 through-hole, -55°C to 175°C junction temperature.","salesMarkdown":"## 300 V, 50 A — StrongIRFET™ in a TO-247-3 The IRF300P227: It comes in a through-hole TO-247-3 package (PG-TO247-3), which means you can swap it on site with a screwdriver and a soldering iron — no hot-air station, no reflow profile. ## 40 mOhm Rds(on) — conduction loss at 30 A The on-resistance is 40 mOhm maximum at 30 A drain current with 10 V gate drive. The 313 W power dissipation rating supports pulsed operation. ## 107 nC gate charge — drive current budget Gate charge is 107 nC at 10 V. The input capacitance is 4893 pF at 50 V drain-source. ## Not a logic-level FET — needs 10 V drive The gate threshold voltage is 4 V maximum at 270 µA drain current. The specified drive voltage for minimum Rds(on) is 10 V, and the absolute maximum gate-source rating is ±20 V. The junction temperature range is -55°C to 175°C.","metaTitle":"IRF300P227 N-Channel MOSFET, 300V, 50A, TO-247-3","metaDescription":"IRF300P227 N-Channel MOSFET, 300V Vdss, 50A continuous drain, 40mOhm Rds(on) at 10V. TO-247-3 through-hole package. Active, ROHS3. Available to order.","metaKeywords":null},"attributes":{"series":"StrongIRFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"StrongIRFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 270µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"40mOhm @ 30A, 10V","Power Dissipation (Max)":"313W (Tc)","Supplier Device Package":"PG-TO247-3","Gate Charge (Qg) (Max) @ Vgs":"107 nC @ 10 V","Drain to Source Voltage (Vdss)":"300 V","Input Capacitance (Ciss) (Max) @ Vds":"4893 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"50A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.6","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$7.60000","currency":"USD"},{"qty":10,"price":"$6.51600","currency":"USD"},{"qty":100,"price":"$5.43000","currency":"USD"},{"qty":500,"price":"$4.79118","currency":"USD"},{"qty":1000,"price":"$4.31207","currency":"USD"},{"qty":2000,"price":"$4.04057","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/Infineon-IRF300P227-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb678da7c74","sourceUrl":null},"ai":{"faq":[{"question":"Is IRF300P227 a logic-level MOSFET?","answer":"No. The gate threshold voltage is 4 V maximum at 270 µA, and the specified drive for minimum Rds(on) is 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF300P227","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF300P227 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}