{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF2907ZPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF2907ZPBF","canonicalUrl":"https://icboms.com/infineon/IRF2907ZPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF2907ZPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRF2907ZPBF, HEXFET series, N-channel MOSFET, 75 V Vdss, 160 A Id, 4.5 mOhm Rds(on) at 10 V, 270 nC Qg, TO-220AB package, -55 to 175 °C.","salesMarkdown":"## Through-hole power MOSFET for high-current switching Operating junction temperature spans -55 to 175 °C, suiting it for industrial and automotive environments where the thermal cycling is aggressive. ## Gate charge and switching speed — driver budget Total gate charge is 270 nC at 10 V — a standard 1 A gate driver will take roughly 270 ns to switch the FET, so plan for a driver with at least 2 A peak source/sink capability if the target switching frequency exceeds 20 kHz. Input capacitance is 7500 pF at 25 V drain bias; the Miller plateau region will add to the effective switching time, so a gate resistor in the 10–22 Ohm range is typical to control ringing without slowing the turn-on excessively. ## Package and thermal path The TO-220AB package has a metal tab that is electrically common with the drain — the PCB or heatsink pad must be isolated or the system must tolerate the drain potential on the heatsink. Maximum power dissipation is 300 W at case temperature, but the real thermal limit depends on the heatsink's thermal resistance; a 1 °C/W heatsink keeps the junction below 175 °C at 100 W dissipation.","metaTitle":"IRF2907ZPBF HEXFET N-Channel MOSFET, 75V 160A TO-220AB","metaDescription":"IRF2907ZPBF N-channel MOSFET, 75V Vdss, 160A Id, 4.5 mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.5mOhm @ 75A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"270 nC @ 10 V","Drain to Source Voltage (Vdss)":"75 V","Input Capacitance (Ciss) (Max) @ Vds":"7500 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"160A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.52","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.52000","currency":"USD"},{"qty":10,"price":"$3.15800","currency":"USD"},{"qty":100,"price":"$2.58720","currency":"USD"},{"qty":500,"price":"$2.20242","currency":"USD"},{"qty":1000,"price":"$1.85746","currency":"USD"},{"qty":2000,"price":"$1.76459","currency":"USD"},{"qty":5000,"price":"$1.73055","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/irf2907zpbf.pdf?fileId=5546d462533600a4015355ded98f1902","sourceUrl":null},"ai":{"faq":[{"question":"What is the gate charge of IRF2907ZPBF?","answer":"Total gate charge is 270 nC at 10 V gate-source voltage."},{"question":"Is IRF2907ZPBF lead-free and ROHS compliant?","answer":"Yes, it is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF2907ZPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF2907ZPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}