{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF2805PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF2805PBF","canonicalUrl":"https://icboms.com/infineon/IRF2805PBF","factsUrl":"https://icboms.com/api/mcp/products/IRF2805PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRF2805PBF, N-Channel MOSFET, 55 V drain-source, 75 A continuous drain, 4.7 mOhm Rds(on) at 10 V, TO-220AB through-hole, -55°C to 175°C junction.","salesMarkdown":"## 4.7 mOhm Rds(on) at 10 V — conduction loss floor for a 55 V rail The TO-220AB through-hole package keeps the thermal path short: 330 W maximum power dissipation at the case, with the junction rated to 175 °C. ## Gate charge and switching budget Total gate charge is 230 nC at 10 V. For a 100 kHz switching frequency the average gate-drive current is 23 mA, but the peak current during the Miller plateau determines the transition time. The 5110 pF input capacitance at 25 V drain-source gives a rough handle on the driver's sourcing and sinking capability — a gate resistor in the 5–10 Ohm range keeps the ringing under control without stretching the switching loss window.","metaTitle":"IRF2805PBF HEXFET N-Ch MOSFET, 55V 75A TO-220AB, 4.7 mOhm","metaDescription":"IRF2805PBF N-channel HEXFET MOSFET, 55 Vdss, 75 A continuous, 4.7 mOhm Rds(on) at 10 V. TO-220AB through-hole, -55 to 175°C.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.7mOhm @ 104A, 10V","Power Dissipation (Max)":"330W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"230 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"5110 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"75A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.55","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.55000","currency":"USD"},{"qty":10,"price":"$2.11600","currency":"USD"},{"qty":100,"price":"$1.68430","currency":"USD"},{"qty":500,"price":"$1.42520","currency":"USD"},{"qty":1000,"price":"$1.20925","currency":"USD"},{"qty":2000,"price":"$1.14879","currency":"USD"},{"qty":5000,"price":"$1.10560","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/irf2805pbf.pdf?fileId=5546d462533600a4015355de928518eb","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF2805PBF?","answer":"This is the worst-case figure at 25 °C junction; actual Rds(on) rises with temperature per the normalised curve in the datasheet."},{"question":"What is the gate charge of IRF2805PBF?","answer":"The input capacitance is 5110 pF at 25 V drain-source. These numbers set the gate-driver peak current requirement for the target switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF2805PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF2805PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}