{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF250P224","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF250P224","canonicalUrl":"https://icboms.com/infineon/IRF250P224","factsUrl":"https://icboms.com/api/mcp/products/IRF250P224","rawCanonicalId":null},"summary":{"shortDescription":"Infineon StrongIRFET™ IRF250P224, N-Channel MOSFET, 250V Vdss, 96A Id, 12mOhm Rds(on) at 10V, TO-247AC through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## 250 V, 96 A, 12 mOhm — high-current switching MOSFET The 12 mOhm maximum on-resistance at Vgs=10 V and 58 A sets the conduction loss floor for a high-current switching stage. The 203 nC gate charge at Vgs=10 V means the gate driver must supply enough peak current to charge and discharge the gate within the target switching dead-time. At 100 kHz switching, the average gate-drive current is about 20 mA, but the peak current from the driver needs to be several amperes to keep switching losses under control. The 9915 pF input capacitance at Vds=50 V is a direct consequence of the large die needed for the 96 A rating. This capacitance dominates the switching speed; a gate-driver with at least 2 A peak source/sink capability is recommended for hard-switched applications above 50 kHz. ## Through-hole TO-247AC — thermal and assembly considerations The TO-247AC through-hole package (three leads, isolated tab) is designed for bolting to a heatsink. The 313 W maximum power dissipation at case temperature assumes the case is held at 25°C — in practice, the junction-to-case thermal resistance sets the real power limit for the chosen heatsink and airflow.","metaTitle":"IRF250P224 N-Channel MOSFET, 250V 96A TO-247AC","metaDescription":"IRF250P224 N-Channel MOSFET, 250V Vdss, 96A continuous drain, 12mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"StrongIRFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"StrongIRFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 270µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"12mOhm @ 58A, 10V","Power Dissipation (Max)":"313W (Tc)","Supplier Device Package":"TO-247AC","Gate Charge (Qg) (Max) @ Vgs":"203 nC @ 10 V","Drain to Source Voltage (Vdss)":"250 V","Input Capacitance (Ciss) (Max) @ Vds":"9915 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"96A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$9.92","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$9.92000","currency":"USD"},{"qty":10,"price":"$8.50300","currency":"USD"},{"qty":100,"price":"$7.08620","currency":"USD"},{"qty":500,"price":"$6.25256","currency":"USD"},{"qty":1000,"price":"$5.62730","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6435da98547ef72d36c2e8cb5127e4fb.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF250P224?","answer":"The maximum on-resistance is 12 mOhm at Vgs=10 V and Id=58 A. This is the value to use for worst-case conduction loss calculations at the rated drive voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF250P224","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF250P224 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}