{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF241","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF241","canonicalUrl":"https://icboms.com/infineon/IRF241","factsUrl":"https://icboms.com/api/mcp/products/IRF241","rawCanonicalId":null},"summary":{"shortDescription":"IRF241, HEXFET N-Channel MOSFET, 150 V, 18 A, 125 W, TO-204AE through-hole package, active lifecycle.","salesMarkdown":"## 150 V, 18 A — the voltage class that saves you from 100 V bus blow-ups The IRF241 is an N-channel HEXFET MOSFET rated at 150 V drain-source and 18 A continuous drain current, in a TO-204AE through-hole package. That 150 V rating puts it solidly above the 48 V to 100 V bus range — you get derating headroom without jumping to a 200 V part that costs more and switches slower. The 125 W power dissipation tells you the thermal budget: at 18 A the Rds(on) will need a heatsink, but the TO-204AE (the old TO-3 can) bolts to a chassis or heatsink with two screws — no PCB pad to pull heat through. 125 W is the maximum power the die can shed at 25 °C case temperature. In a real motor drive or battery charger running at 10 A and 0.2 Ω Rds(on) (hot), that is 20 W of conduction loss — well inside the 125 W ceiling, but you still need a heatsink sized for the ambient. The TO-204AE case gives you a metal tab that bolts directly to a chassis; a smear of thermal grease and two 4-40 screws and you are done. No lab, no bench — swap it on site if the old one blew. No need to stockpile or chase a replacement yet.","metaTitle":"IRF241 HEXFET N-Channel MOSFET, 150V 18A TO-204AE","metaDescription":"IRF241 N-channel HEXFET MOSFET, 150V 18A, 125W. TO-204AE through-hole package. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"series":"HEXFET®","power_w":"125.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"150.0","switching_current_a":"18.0"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.53","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/de38f4591b69973f791b94ed5c8597db.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between IRF241 and IRF240?","answer":"The IRF241 is rated at 150 V drain-source, while the IRF240 is a 200 V part. Both are N-channel HEXFETs in the same TO-204AE package, but the 150 V rating of the IRF241 gives a lower Rds(on) for the same die area — better conduction efficiency if your bus voltage stays under 100 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF241","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF241 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}