{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF225","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF225","canonicalUrl":"https://icboms.com/infineon/IRF225","factsUrl":"https://icboms.com/api/mcp/products/IRF225","rawCanonicalId":null},"summary":{"shortDescription":"IRF225, N-Channel Hermetic MOS HEXFET, 250 V drain-source voltage, 3.3 A continuous drain current, 40 W power dissipation, Through Hole TO-3 package, Active lifecycle.","salesMarkdown":"## Hermetic N-Channel HEXFET for High-Reliability Power Switching The IRF225 is an N-Channel enhancement-mode power MOSFET built on the HEXFET structure, housed in a hermetic TO-3 package. It is rated for a drain-source voltage of 250 V, continuous drain current of 3.3 A, and power dissipation of 40 W. The hermetic TO-3 package seals the die against moisture and contamination, making this part suited for military, aerospace, and downhole environments where standard plastic-packaged MOSFETs would fail from corrosion or outgassing. ## 250 V / 3.3 A — Thermal and Load Budget The 250 V drain-source rating provides headroom for a 170 VDC or 120 VAC rectified bus in motor drives, inverters, and switch-mode power supplies. The 3.3 A continuous current is the DC limit at case temperature; actual usable current derates with junction temperature per the datasheet's SOA curve. With a 40 W power dissipation ceiling, the thermal design must keep the case-to-ambient resistance low — a TO-3 bolted to a heatsink with thermal compound typically achieves 1–2 °C/W junction-to-case. Budget the heatsink area for the worst-case conduction loss at 3.3 A and the switching loss at the target frequency. ## Through-Hole Mounting in the TO-3 Base The through-hole mounting uses two 0.160-inch mounting holes on a 1.187-inch bolt circle, standard for TO-3. The collector (drain) tab is the case itself — the heatsink must be electrically isolated or the system ground must reference the drain potential.","metaTitle":"IRF225 N-Channel MOSFET, 250 V, 3.3 A, 40 W, TO-3 Hermetic","metaDescription":"IRF225 N-Channel HEXFET power MOSFET. 250 V drain-source, 3.3 A continuous, 40 W dissipation. Hermetic TO-3 package. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"power_w":"40.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"250.0","switching_current_a":"3.3"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.00","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/de38f4591b69973f791b94ed5c8597db.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF225","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF225 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}