{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF200B211","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF200B211","canonicalUrl":"https://icboms.com/infineon/IRF200B211","factsUrl":"https://icboms.com/api/mcp/products/IRF200B211","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET®, StrongIRFET™ series, IRF200B211 N-Channel MOSFET, 200 V Vdss, 12 A Id, 170 mOhm Rds(on) at 10 V, 23 nC Qg, TO-220AB through-hole, -55°C to 175°C junction temperature.","salesMarkdown":"## 200 V, 12 A N-channel — the StrongIRFET™ workhorse It comes in a TO-220AB through-hole package — the tab is the drain, so a single screw to a heatsink handles both electrical connection and thermal management. With a junction temperature range from -55°C to 175°C, this part is rated for military and industrial environments where the die sees sustained high temperature — avionics power supplies, downhole instrumentation, and motor drives in engine bays. The 170 mOhm Rds(on) is specified at 7.2 A drain current and 10 V gate drive — that's the max at 25°C junction. At 175°C the on-resistance roughly doubles, so for a 12 A load the conduction loss at high temperature lands around 4 W, which the 80 W package power rating can handle with a decent heatsink. The 23 nC total gate charge at 10 V means the driver needs to deliver about 23 nC per switching event; at 100 kHz that's 2.3 mA average gate current, but the peak current during the Miller plateau determines the switching time. The ±20 V maximum gate-source voltage gives margin for gate-drive overshoot in hard-switching topologies, and the 4.9 V max threshold at 50 µA means the device is fully enhanced with a standard 10 V gate drive. The 790 pF input capacitance at 50 V Vds is modest — the driver sees a capacitive load that charges quickly, so turn-on delay stays short.","metaTitle":"IRF200B211 N-Channel MOSFET, 200V 12A TO-220AB","metaDescription":"IRF200B211 N-channel HEXFET® StrongIRFET™ MOSFET, 200V Vdss, 12A Id, 170mOhm Rds(on). Through-hole TO-220AB. Active production.","metaKeywords":null},"attributes":{"series":"HEXFET®, StrongIRFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®, StrongIRFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.9V @ 50µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"170mOhm @ 7.2A, 10V","Power Dissipation (Max)":"80W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"23 nC @ 10 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"790 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.06","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.06000","currency":"USD"},{"qty":10,"price":"$0.86400","currency":"USD"},{"qty":100,"price":"$0.67190","currency":"USD"},{"qty":500,"price":"$0.56954","currency":"USD"},{"qty":1000,"price":"$0.46395","currency":"USD"},{"qty":2000,"price":"$0.43676","currency":"USD"},{"qty":5000,"price":"$0.41596","currency":"USD"},{"qty":10000,"price":"$0.39676","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/83d7ce1af6422229809aa17e5abb9188.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the IRF200B211?","answer":"The maximum Rds(on) is 170 mOhm at 7.2 A drain current and 10 V gate drive. This is the max at 25°C junction temperature; at elevated temperature the on-resistance increases, so derate conduction loss accordingly."},{"question":"What is the closest functional second-source to the IRF200B211?","answer":"The IPD50R950CEAUMA1 from Infineon's CoolMOS™ CE series is a 500 V, 4.3 A N-channel MOSFET in a surface-mount DPAK package. It has a higher Rds(on) at 950 mOhm and lower gate charge at 10.5 nC, but it is not a pin-compatible drop-in — the voltage class, current rating, and package differ significantly. For a 200 V through-hole design, the IRF200B211 is the primary fit."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF200B211","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF200B211 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}