{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF1404ZSTRRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF1404ZSTRRPBF","canonicalUrl":"https://icboms.com/infineon/IRF1404ZSTRRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF1404ZSTRRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® N-Channel MOSFET, 40 V Vdss, 180 A continuous drain, 3.7 mOhm Rds(on) at 10 V, D2Pak surface-mount package, -55°C to 175°C junction temperature.","salesMarkdown":"The IRF1404ZSTRRPBF: Housed in a D2Pak (TO-263-3) surface-mount package, this part dissipates up to 200 W case-limited. Date-code provenance matters here — verify the stock comes from a traceable channel to avoid counterfeit risk on an EOL part. The 40 V Vdss gives 50% derating margin on a 12 V rail and comfortable headroom on a 24 V system, but for 48 V bus architectures this part is too close to the limit — look for a 60 V or 75 V rated MOSFET instead. The 180 A continuous rating is a package-limited number at 25°C case temperature; real-world current depends on heatsinking and ambient. The 3.7 mOhm Rds(on) at 10 V drive means the gate must see a full 10 V to achieve the lowest on-resistance — a 5 V logic-level gate drive will roughly double the resistance, increasing conduction losses.","metaTitle":"IRF1404ZSTRRPBF N-Channel MOSFET, 40V, 180A","metaDescription":"IRF1404ZSTRRPBF HEXFET N-Channel MOSFET, 40V Vdss, 180A Id, 3.7mOhm Rds(on) at 10V. D2Pak surface-mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 150µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"3.7mOhm @ 75A, 10V","Power Dissipation (Max)":"200W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"150 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"4340 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"180A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.1200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9fb5926ba71579ba4ba01d27e8471b1e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF1404ZSTRRPBF/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for IRF1404ZSTRRPBF?","answer":"No official replacement is listed by Infineon for this specific order code. For a pin-compatible alternative in the same D2Pak footprint, look at other 40 V N-channel MOSFETs in the HEXFET family with similar Rds(on) and current ratings — but verify gate drive and switching characteristics against your design. We can help identify a cross if you send the full BOM context."},{"question":"Where can I buy IRF1404ZSTRRPBF?","answer":"Submit an RFQ; we confirm availability and current pricing at quote time."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF1404ZSTRRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF1404ZSTRRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T15:23:25.325Z","lastPublished":"2026-07-16T15:23:25.325Z","indexable":true}}