{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF1404SPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF1404SPBF","canonicalUrl":"https://icboms.com/infineon/IRF1404SPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF1404SPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRF1404SPBF HEXFET N-Channel MOSFET, 40 V Vdss, 162 A continuous drain, 4 mOhm Rds(on) at 10 V, D2PAK surface-mount, -55°C to 175°C.","salesMarkdown":"That conduction loss stays under 0.65 W at 40 A RMS in a typical 12 V rail, which means the heatsink can be small or the PCB copper does the work. But the 200 nC total gate charge at 10 V means the gate driver needs to source and sink that charge fast — a 1 A driver gives roughly 200 ns rise time, acceptable for 50–100 kHz switching; above that, budget a stronger driver or accept higher crossover loss. ## D2PAK package — rework and thermal reality Under a hot-air station, the large tab soaks heat quickly; preheat the board to 125°C before rework, or the solder on the tab reflows before the leads wet, trapping voids. For dual-sourcing or a drop-in alternative, the IRF1404ZPBF is a common cross-shop candidate — same 40 V, 162 A rating in the same D2PAK footprint, but with Zener-gate protection that slightly raises the gate threshold. Check the gate drive voltage against your circuit before swapping.","metaTitle":"IRF1404SPBF HEXFET N-Channel MOSFET, 40V, 162A, D2PAK","metaDescription":"IRF1404SPBF N-channel HEXFET MOSFET from Infineon: 40V Vdss, 162A continuous drain, 4mOhm Rds(on) at 10V. D2PAK surface-mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4mOhm @ 95A, 10V","Power Dissipation (Max)":"3.8W (Ta), 200W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"200 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"7360 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"162A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.5300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/68b0c9265793263ea8a4200f121a5cf6.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF1404SPBF/alternatives.json"},"ai":{"faq":[{"question":"What is the maximum gate charge of the IRF1404SPBF?","answer":"The maximum gate charge is 200 nC at 10 V gate-to-source voltage, as listed in the specifications. This value drives the gate-driver sizing for switching applications."},{"question":"Is the IRF1404SPBF lead-free and RoHS compliant?","answer":"The 'PBF' suffix in the order code indicates lead-free (Pb-free) plating, and the part is RoHS compliant per Infineon's standard environmental compliance. No separate certification number is carried in this listing."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF1404SPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF1404SPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}