{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF1010NSTRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF1010NSTRLPBF","canonicalUrl":"https://icboms.com/infineon/IRF1010NSTRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF1010NSTRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET series, IRF1010NSTRLPBF N-Channel MOSFET, 55V Vdss, 85A Id, 11mOhm Rds(on) at 10V, 120nC Qg, D2PAK surface mount, -55°C to 175°C.","salesMarkdown":"The IRF1010NSTRLPBF: Gate charge is 120 nC at 10 V; input capacitance is 3210 pF at 25 V. Rds(on) is 11 mOhm at 43 A and 10 V drive. ## D2PAK thermal and layout considerations Power dissipation is 180 W at case temperature. Gate-source rating is ±20 V. ## Active production and compliance It is ROHS3 compliant, with no exemptions that would restrict its use in new designs targeting European or global markets. ## Sourcing and quoting For volume requirements or urgent line-down situations, submit an RFQ and we will source against the verified production date code.","metaTitle":"IRF1010NSTRLPBF HEXFET N-Channel MOSFET, 55V, 85A, D2PAK","metaDescription":"IRF1010NSTRLPBF N-channel MOSFET from the HEXFET series, 55V Vdss, 85A continuous drain, 11mOhm Rds(on) at 10V. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"11mOhm @ 43A, 10V","Power Dissipation (Max)":"180W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"120 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"3210 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"85A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.16","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.16000","currency":"USD"},{"qty":10,"price":"$1.93900","currency":"USD"},{"qty":100,"price":"$1.55860","currency":"USD"},{"qty":800,"price":"$1.28058","currency":"USD"},{"qty":1600,"price":"$1.06715","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRF1010NSTRLPBF?","answer":"The maximum on-resistance is 11 mOhm at 43 A drain current and 10 V gate drive. This value is specified at 25 °C junction temperature; expect the resistance to increase with temperature, roughly 1.5× at 125 °C."},{"question":"What is the gate charge of IRF1010NSTRLPBF?","answer":"The maximum total gate charge is 120 nC at 10 V gate-source voltage. This determines the gate-drive current needed for a given switching frequency — for example, 120 nC at 100 kHz requires an average gate current of 12 mA."},{"question":"Is IRF1010NSTRLPBF RoHS compliant?","answer":"Yes, the IRF1010NSTRLPBF is ROHS3 compliant, with no restricted substances above the threshold limits."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF1010NSTRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF1010NSTRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}