{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF1010EZPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF1010EZPBF","canonicalUrl":"https://icboms.com/infineon/IRF1010EZPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF1010EZPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRF1010EZPBF, N-channel MOSFET, 60 V Vds, 75 A Id, 8.5 mOhm Rds(on) at 51 A, 10 V Vgs, 86 nC Qg, TO-220AB, -55°C to 175°C.","salesMarkdown":"## 8.5 mOhm at 51 A — conduction loss floor The IRF1010EZPBF is an Infineon HEXFET® N-channel power MOSFET in a through-hole TO-220AB package. Continuous drain current is 75 A at 25 °C case temperature, with a 60 V drain-to-source breakdown. The 140 W power dissipation at case temp defines the heatsink requirement for continuous operation. ## Gate charge and switching speed Total gate charge is 86 nC at 10 V Vgs. For a 100 kHz switching frequency, the average gate-drive current is 8.6 mA — a standard driver IC handles this easily. The 2810 pF input capacitance at 25 V Vds gives a rough Miller plateau timescale; pair it with a driver that can source and sink at least 1 A for fast turn-on transitions. Gate threshold is 4 V max at 100 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V. This is a standard-logic-level gate — a 5 V microcontroller output will not fully enhance it; use a gate driver or a 10 V rail. ## Temperature range and package Junction temperature range is -55°C to 175°C — a full military-grade envelope. This part suits avionics, downhole tools, and high-ambient industrial enclosures where the junction sees sustained thermal stress. The TO-220AB package is a standard three-lead through-hole footprint with a metal tab for heatsink attachment. Maximum Vgs is ±20 V, so the gate can tolerate transients above the 10 V drive rail without avalanche failure — useful in noisy motor-drive environments. ROHS3 compliant per.","metaTitle":"IRF1010EZPBF N-Channel MOSFET, 60V 75A TO-220AB, HEXFET®","metaDescription":"Infineon IRF1010EZPBF N-channel HEXFET® MOSFET, 60V Vds, 75A Id, 8.5mOhm Rds(on) at 51A. TO-220AB, -55°C to 175°C. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 100µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"8.5mOhm @ 51A, 10V","Power Dissipation (Max)":"140W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"86 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"2810 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"75A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.62","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.62000","currency":"USD"},{"qty":10,"price":"$1.32500","currency":"USD"},{"qty":100,"price":"$1.03040","currency":"USD"},{"qty":500,"price":"$0.87338","currency":"USD"},{"qty":1000,"price":"$0.71145","currency":"USD"},{"qty":2000,"price":"$0.66975","currency":"USD"},{"qty":5000,"price":"$0.63786","currency":"USD"},{"qty":10000,"price":"$0.60842","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/irf1010ezpbf.pdf?fileId=5546d462533600a4015355da68861885","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the IRF1010EZPBF?","answer":"Maximum on-resistance is 8.5 mOhm at 51 A drain current and 10 V gate drive. This is the value to use for worst-case conduction loss calculations."},{"question":"Is the IRF1010EZPBF RoHS compliant?","answer":"Yes, it is listed as ROHS3 compliant."},{"question":"What is the closest functional second-source for the IRF1010EZPBF?","answer":"The IPD50R950CEAUMA1 is a CoolMOS™ CE N-channel MOSFET, but it is a 500 V, 4.3 A, 950 mOhm surface-mount device — a different voltage and current class. It is not a pin-compatible drop-in for the IRF1010EZPBF."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF1010EZPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF1010EZPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}