{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRF1010EPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRF1010EPBF","canonicalUrl":"https://icboms.com/infineon/IRF1010EPBF","factsUrl":"https://icboms.com/api/mcp/products/IRF1010EPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRF1010EPBF, N-Channel MOSFET, 60V Vdss, 84A Id, 12mOhm Rds(on) @ 10V, TO-220AB, -55°C to 175°C junction.","salesMarkdown":"## 60 V, 84 A N-channel HEXFET in a TO-220AB The Infineon IRF1010EPBF is a 60 V, 84 A N-channel power MOSFET from the HEXFET series, built on a planar stripe MOSFET (Metal Oxide) technology. It comes in a through-hole TO-220AB package.","metaTitle":"IRF1010EPBF HEXFET N-Channel MOSFET, 60V 84A TO-220AB","metaDescription":"IRF1010EPBF N-channel MOSFET from Infineon HEXFET series. 60V Vdss, 84A Id, 12mOhm Rds(on) at 10V. Through-hole TO-220AB. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"12mOhm @ 50A, 10V","Power Dissipation (Max)":"200W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"130 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"3210 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"84A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6","priceTiers":[{"qty":1,"price":"$1.60000","currency":"USD"},{"qty":10,"price":"$1.42900","currency":"USD"},{"qty":100,"price":"$1.11380","currency":"USD"},{"qty":500,"price":"$0.92010","currency":"USD"},{"qty":1000,"price":"$0.72640","currency":"USD"},{"qty":2000,"price":"$0.67797","currency":"USD"},{"qty":5000,"price":"$0.64407","currency":"USD"},{"qty":10000,"price":"$0.63165","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/45ac6dfc9f623b12bfcaabc5fc6ff689.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRF1010EPBF/alternatives.json"},"ai":{"faq":[{"question":"IRF1010EPBF vs IRF3205: which is better?","answer":"The IRF3205 is a 55 V, 110 A N-channel MOSFET also in a TO-220AB, while the IRF1010EPBF is 60 V, 84 A. The IRF3205 offers higher current but a lower voltage rating. For a 48 V bus the IRF1010EPBF's 60 V rating gives better derating headroom; for a 12 V or 24 V rail the IRF3205's higher current capability may be preferred. Both share the same footprint and gate-drive voltage requirement of 10 V."},{"question":"What is the closest pin-compatible alternative to IRF1010EPBF in this component family?","answer":"Within the HEXFET family, the IRF3205 (55 V, 110 A) is a common pin-compatible alternative in the same TO-220AB package, though its lower Vdss may not suit all applications. No official Infineon cross-reference to an alternate order code is listed here."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRF1010EPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRF1010EPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-13T21:05:34.174Z","lastPublished":"2026-07-13T21:05:34.174Z","indexable":true}}