{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IR2181SPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IR2181SPBF","canonicalUrl":"https://icboms.com/infineon/IR2181SPBF","factsUrl":"https://icboms.com/api/mcp/products/IR2181SPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon (International Rectifier) IR2181SPBF half-bridge gate driver, 2 independent non-inverting channels, 1.9A source / 2.3A sink peak output, 600V bootstrap, 40ns/20ns rise/fall, 10V-20V supply, -40°C to 150°C junction, 8-SOIC package.","salesMarkdown":"## Half-bridge gate driver for motor drives and power supplies The IR2181SPBF is a half-bridge gate driver with two independent, non-inverting channels. It drives IGBTs and N-Channel MOSFETs, with a 600 V bootstrap rating and 1.9 A source, 2.3 A sink peak output. ## 8-SOIC package — rework and layout notes The IR2181SPBF comes in an 8-SOIC package with 3.90 mm width. The -40°C to 150°C junction temperature range gives margin for motor-drive environments. ## Active lifecycle — no LTB clock ticking The IR2181SPBF carries an Active lifecycle status and is ROHS3 compliant. For BOM planning, this part is still a standard production choice suitable for new designs and volume builds.","metaTitle":"IR2181SPBF Gate Driver, Half-Bridge, 600V Bootstrap, 8-SOIC","metaDescription":"IR2181SPBF half-bridge gate driver from Infineon (International Rectifier). Drives IGBT and N-Channel MOSFET.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Package":"Tube","Gate Type":"IGBT, N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"10V ~ 20V","Number of Drivers":"2","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 150°C (TJ)","Rise / Fall Time (Typ)":"40ns, 20ns","Supplier Device Package":"8-SOIC","Logic Voltage - VIL, VIH":"0.8V, 2.7V","High Side Voltage - Max (Bootstrap)":"600 V","Current - Peak Output (Source, Sink)":"1.9A, 2.3A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.02","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.02000","currency":"USD"},{"qty":10,"price":"$3.61000","currency":"USD"},{"qty":25,"price":"$3.41240","currency":"USD"},{"qty":100,"price":"$2.95740","currency":"USD"},{"qty":250,"price":"$2.80576","currency":"USD"},{"qty":500,"price":"$2.51758","currency":"USD"},{"qty":1000,"price":"$2.30790","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/41f558c28bbfb3e075655af608787615.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can IR2181SPBF drive both high-side and low-side MOSFETs in a half-bridge?","answer":"Yes, the IR2181SPBF is configured as a half-bridge driver with two independent, non-inverting channels. It drives both the high-side and low-side switches, with the high-side channel powered by a bootstrap supply rated to 600 V."},{"question":"Can IR2181SPBF drive both IGBT and MOSFET?","answer":"Yes, the gate type is specified for both IGBT and N-Channel MOSFET. The 1.9 A source and 2.3 A sink peak output is sufficient to drive medium-power devices in both families."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IR2181SPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IR2181SPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}