{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IR2153PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IR2153PBF","canonicalUrl":"https://icboms.com/infineon/IR2153PBF","factsUrl":"https://icboms.com/api/mcp/products/IR2153PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IR2153PBF half-bridge gate driver, 600 V bootstrap, 80 ns rise / 45 ns fall, 10 V to 15.6 V supply, N-channel MOSFET, through-hole 8-DIP, -40°C to 125°C.","salesMarkdown":"## Half-bridge driver with integrated oscillator and 600 V bootstrap The Infineon IR2153PBF is a self-oscillating half-bridge gate driver designed for N-channel MOSFETs in a synchronous half-bridge configuration. The bootstrap supply handles up to 600 V on the high side, making it suitable for offline AC-DC converters, electronic ballasts, and half-bridge inverters up to that rail voltage. The 80 ns typical rise time and 45 ns fall time keep switching losses manageable at common 50-100 kHz operating frequencies. ## NRND — plan the last-time-buy window This means Infineon has flagged the part for eventual discontinuation — new designs should not use it, and existing production runs need to secure final inventory or qualify a replacement before the last-time-buy closes. For sustainment programs already using the IR2153PBF, the immediate action is to estimate remaining lifetime demand and place a last-time-buy order through independent distribution. ## Switching speed and dead-time trade-offs The 80 ns rise and 45 ns fall times are typical at the rated supply and load — actual edge rates depend on the external MOSFET gate charge and the RC timing components. In designs switching above 100 kHz, the internal dead-time (typically 1.2 µs) may limit the maximum duty cycle or force a lower frequency to avoid shoot-through. The RC input circuit lets the designer set the oscillator frequency with one resistor and one capacitor. The internal dead-time is fixed, so the frequency selection must account for the dead-time as a fraction of the period — at 100 kHz the dead-time consumes about 12 % of the cycle, which may be acceptable for resonant loads but tight for hard-switched inductive loads. ## Package and footprint — 8-DIP through-hole The IR2153PBF is supplied in an 8-DIP (0.300-inch, 7.62 mm) through-hole package, designated 8-PDIP by the supplier. The through-hole format simplifies prototyping and hand-assembly but occupies more board area than a surface-mount alternative. The tube shipping medium is standard for DIP packages.","metaTitle":"IR2153PBF Half-Bridge Driver, 600 V Bootstrap, 80/45 ns","metaDescription":"IR2153PBF half-bridge gate driver with 600 V bootstrap, 80 ns rise / 45 ns fall, N-channel MOSFET, -40°C to 125°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"NRND","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tube","Gate Type":"N-Channel MOSFET","Input Type":"RC Input Circuit","Channel Type":"Synchronous","Mounting Type":"Through Hole","Package / Case":"8-DIP (0.300\\\", 7.62mm)","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Voltage - Supply":"10V ~ 15.6V","Number of Drivers":"2","Base Product Number":"IR2153","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 125°C (TJ)","Rise / Fall Time (Typ)":"80ns, 45ns","Supplier Device Package":"8-PDIP","Logic Voltage - VIL, VIH":"-","High Side Voltage - Max (Bootstrap)":"600 V","Current - Peak Output (Source, Sink)":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.3100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c705b966cb55c4c53da47ed2a811c8d7.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IR2153PBF/alternatives.json"},"ai":{"faq":[{"question":"What is the difference between IR2153 and IR2153PBF?","answer":"The IR2153PBF is the lead-free (PbF) version of the base IR2153. The electrical specifications — 600 V bootstrap, 80/45 ns switching, 10 V to 15.6 V supply — are identical. The PBF suffix indicates RoHS-compliant plating on the leads; the die and package are otherwise the same."},{"question":"What is the best replacement for IR2153PBF?","answer":"Infineon has not published an official direct replacement for the IR2153PBF. For new designs, consider the IR2153S (surface-mount SOIC-8 variant) if board space allows, or a newer self-oscillating half-bridge driver such as the IRS2153D with adjustable dead-time. Validate pin compatibility and RC timing before substituting."},{"question":"Can IR2153PBF be used with N-channel MOSFETs?","answer":"Yes — the IR2153PBF is specifically designed to drive N-channel MOSFETs in a half-bridge configuration. The high-side driver uses a bootstrap capacitor referenced to the switch node, so the bootstrap diode and capacitor must be rated for the full DC bus voltage (up to 600 V)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IR2153PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IR2153PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:03:28.771Z","lastPublished":"2026-07-22T18:03:28.771Z","indexable":true}}