{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IR2136JPBF-INF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IR2136JPBF-INF","canonicalUrl":"https://icboms.com/infineon/IR2136JPBF-INF","factsUrl":"https://icboms.com/api/mcp/products/IR2136JPBF-INF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IR2136JPBF-INF 3-Phase Bridge Driver, Gate Type IGBT/N-Channel MOSFET, Input Non-Inverting, 6 Drivers, Half-Bridge, 10V~20V Supply, 600V Bootstrap, 200mA/350mA Peak, 44-LCC J-Lead, -40°C~125°C.","salesMarkdown":"## Three-Phase Gate Driver for Motor-Drive and Inverter Stages The Infineon IR2136JPBF-INF is a 3-phase half-bridge gate driver IC designed to drive IGBTs and N-channel MOSFETs in inverter and motor-drive stages. It integrates six drivers in a single surface-mount package, with a bootstrap supply rated to 600 V for the high-side channels. ## Switching Speed and Dead-Time Budget The typical rise time of 125 ns and fall time of 50 ns define the switching transition window. The 600 V bootstrap rating covers bus architectures with margin for switching transients. ## Package and Mounting The surface-mount package body is 16.59 mm × 16.59 mm. The J-lead footprint provides a reliable solder joint under thermal cycling, and the package outline suits automated pick-and-place. ## Lifecycle and Compliance The IR2136JPBF-INF carries an Active product status and is ROHS3 compliant. The ROHS3 compliance covers the latest exemption updates, so it passes EU and Chinese RoHS requirements for the foreseeable future.","metaTitle":"IR2136JPBF-INF 3-Phase Bridge Driver, 600V Bootstrap","metaDescription":"IR2136JPBF-INF 3-phase half-bridge driver for IGBT/N-MOSFET. 600V bootstrap, 200mA/350mA peak output, -40°C to 125°C. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Package":"Bulk","Gate Type":"IGBT, N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"3-Phase","Mounting Type":"Surface Mount","Package / Case":"44-LCC (J-Lead)","lifecycle_stage":"eol_hot","Voltage - Supply":"10V ~ 20V","Number of Drivers":"6","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 125°C (TA)","Rise / Fall Time (Typ)":"125ns, 50ns","Supplier Device Package":"44-PLCC (16.59x16.59)","Logic Voltage - VIL, VIH":"0.8V, 3V","High Side Voltage - Max (Bootstrap)":"600 V","Current - Peak Output (Source, Sink)":"200mA, 350mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.88","stockQuantity":0,"priceTiers":[{"qty":105,"price":"$2.88000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/0e4351a4bf5700887cfac72b66c7f743.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What gate types does the IR2136JPBF-INF support?","answer":"The driver is specified for IGBT and N-channel MOSFET gates. The 200 mA source and 350 mA sink peak current is adequate for medium-power discrete devices and smaller IGBT modules. For larger modules requiring higher gate current, a booster stage would be needed."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IR2136JPBF-INF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IR2136JPBF-INF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}