{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IR2113","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IR2113","canonicalUrl":"https://icboms.com/infineon/IR2113","factsUrl":"https://icboms.com/api/mcp/products/IR2113","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IR2113 half-bridge gate driver, 600 V bootstrap, 2 A peak source/sink, 14-DIP through-hole, -40°C to 150°C junction temperature.","salesMarkdown":"## 600 V bootstrap, 2 A peak — half-bridge driver for IGBT and MOSFET gates The IR2113 is a high-voltage half-bridge gate driver from Infineon (originally International Rectifier) designed to drive IGBTs and N-Channel MOSFETs in a half-bridge configuration. It integrates a bootstrap supply for the high-side gate, rated to 600 V maximum, and delivers 2 A peak source and sink current to each of its two independent, non-inverting channels. The supply voltage range spans 3.3 V to 20 V. For new designs, evaluate current-production half-bridge drivers from Infineon or competitors, verifying pin compatibility and parametric differences against the IR2113 datasheet. ## 14-DIP through-hole package — layout and thermal considerations The IR2113 is supplied in a 14-DIP (0.300\", 7.62 mm) through-hole package. The logic input thresholds are specified at VIL = 6 V and VIH = 9.5 V. The bootstrap diode is internal; the bootstrap capacitor must be sized externally per the datasheet guidelines to maintain sufficient gate drive voltage during the high-side on-time.","metaTitle":"IR2113 Half-Bridge Gate Driver, 600 V Bootstrap, 2 A Peak","metaDescription":"IR2113 half-bridge gate driver for IGBT and N-Channel MOSFET. 600 V bootstrap, 2 A peak source/sink, 14-DIP.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tube","Gate Type":"IGBT, N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Through Hole","Package / Case":"14-DIP (0.300\\\", 7.62mm)","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Voltage - Supply":"3.3V ~ 20V","Number of Drivers":"2","Base Product Number":"IR2113","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C~150°C(TJ)","Rise / Fall Time (Typ)":"25ns, 17ns","Supplier Device Package":"14-DIP","Logic Voltage - VIL, VIH":"6V, 9.5V","High Side Voltage - Max (Bootstrap)":"600 V","Current - Peak Output (Source, Sink)":"2A, 2A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.3400","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IR2113/alternatives.json"},"ai":{"faq":[{"question":"Can IR2113 drive IGBTs?","answer":"Yes, the IR2113 is specified for IGBT and N-Channel MOSFET gates. The 2 A peak source/sink current is sufficient for small to medium IGBT modules; larger modules may require a booster stage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IR2113","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IR2113 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:03:28.771Z","lastPublished":"2026-07-22T18:03:28.771Z","indexable":true}}