{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IR2110","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IR2110","canonicalUrl":"https://icboms.com/infineon/IR2110","factsUrl":"https://icboms.com/api/mcp/products/IR2110","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IR2110 half-bridge gate driver, 500 V bootstrap, 2 A peak source/sink, 25 ns rise, 17 ns fall, 3.3 V to 20 V supply, through-hole 14-DIP, -40°C to 150°C junction.","salesMarkdown":"## 500 V bootstrap — the application ceiling The IR2110 is a high-voltage half-bridge gate driver rated for a bootstrap supply up to 500 V on the high side. That 500 V ceiling sets the bus voltage limit for motor drives, UPS inverters, and switch-mode power supplies where this driver sits between the PWM controller and the IGBT or N-Channel MOSFET power stage. Two independent channels, each capable of 2 A peak source and sink current, give the IR2110 the drive strength to switch large-gate-charge devices through the 25 ns rise and 17 ns fall times typical at the output. ## Supply and logic interface The logic input thresholds — VIL at 6 V, VIH at 9.5 V — are referenced to the driver's own VSS, not the controller supply, so the interface needs a clean ground return between the two. No official successor is listed on the record. Supplied in a 14-lead DIP (0.300-inch body, 7.62 mm pitch) with through-hole mounting — the same footprint as the industry-standard IR2110 family.","metaTitle":"IR2110 Half-Bridge Gate Driver, 500 V Bootstrap, 2 A Peak","metaDescription":"IR2110 half-bridge gate driver for IGBT and N-Channel MOSFET. 500 V bootstrap, 2 A peak output, 25 ns rise time. Request RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tube","Gate Type":"IGBT, N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Through Hole","Package / Case":"14-DIP (0.300\\\", 7.62mm)","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Voltage - Supply":"3.3V ~ 20V","Number of Drivers":"2","Base Product Number":"IR2110","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 150°C (TJ)","Rise / Fall Time (Typ)":"25ns, 17ns","Supplier Device Package":"14-DIP","Logic Voltage - VIL, VIH":"6V, 9.5V","High Side Voltage - Max (Bootstrap)":"500 V","Current - Peak Output (Source, Sink)":"2A, 2A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.2400","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IR2110/alternatives.json"},"ai":{"faq":[{"question":"Can the IR2110 drive IGBTs and N-Channel MOSFETs?","answer":"Yes, the IR2110 is specified for both IGBT and N-Channel MOSFET gate drive. The 2 A peak output current and 25 ns rise time are sufficient for medium-power devices in half-bridge topologies up to 500 V bus."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IR2110","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IR2110 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:03:28.771Z","lastPublished":"2026-07-22T18:03:28.771Z","indexable":true}}