{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IQE006NE2LM5CGSCATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IQE006NE2LM5CGSCATMA1","canonicalUrl":"https://icboms.com/infineon/IQE006NE2LM5CGSCATMA1","factsUrl":"https://icboms.com/api/mcp/products/IQE006NE2LM5CGSCATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ 5 N-Channel MOSFET, 25 V Vdss, 0.58 mOhm max Rds(on) at 20 A, 10 V, 310 A continuous drain at Tc, PG-WHTFN-9-1 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 0.58 mOhm at 10 V — the conduction-loss floor for high-current rails The Infineon IQE006NE2LM5CGSCATMA1 is an N-channel OptiMOS™ 5 power MOSFET rated for 25 V drain-source and a max on-resistance of 0.58 mOhm at 20 A with 10 V gate drive. That sub-milliohm figure is the headline: it means the conduction loss at 50 A is under 1.5 W, which keeps the die temperature manageable even without heroic heatsinking. The 310 A continuous drain rating at the case (Tc) tells you the silicon can handle the current — the real limit will be the PCB's ability to pull heat out of the PG-WHTFN-9-1 package's exposed pad. ## 4.5 V or 10 V gate drive — matching the driver to the rail The datasheet specifies Rds(on) at both 4.5 V and 10 V drive voltages. If your design runs a 5 V logic rail and the gate driver is a simple GPIO, the 4.5 V spec is the one that matters — the FET will still turn on hard, but the on-resistance will be higher than the 10 V figure. For the full 0.58 mOhm, you need a 10 V gate supply. The gate charge of 82 nC at 10 V means a driver capable of sourcing a few amps peak will switch this FET at tens of kilohertz without excessive cross-conduction. The 150°C ceiling gives enough headroom for the 2.1 W dissipation at the board (Ta) or 89 W at the case (Tc) before the silicon hits its limit. The 2 V max gate threshold at 250 µA means the FET is fully off below about 1.5 V, so a 3.3 V logic rail will not accidentally turn it on during power-up sequencing. ## Package and footprint — PG-WHTFN-9-1 thermal reality The 0.58 mOhm Rds(on) is only achievable if the board can sink the heat — a two-layer board with minimal copper will let the junction temperature climb well above the 150°C limit at high current. The input capacitance of 5453 pF at 12 V is moderate; the gate driver sees a capacitive load that is easy to drive at moderate frequencies, but at 100 kHz+ the switching losses from charging and discharging that capacitance start to add up.","metaTitle":"Infineon IQE006NE2LM5CGSCATMA1 N-Channel MOSFET, 25 V","metaDescription":"Infineon OptiMOS 5 N-Channel MOSFET, 25 V Vdss, 0.58 mOhm Rds(on) at 10 V, 310 A continuous drain. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™ 5","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™ 5","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"9-PowerWDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"0.58mOhm @ 20A, 10V","Power Dissipation (Max)":"2.1W (Ta), 89W (Tc)","Supplier Device Package":"PG-WHTFN-9-1","Gate Charge (Qg) (Max) @ Vgs":"82 nC @ 10 V","Drain to Source Voltage (Vdss)":"25 V","Input Capacitance (Ciss) (Max) @ Vds":"5453 pF @ 12 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"47A (Ta), 310A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.7","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.70000","currency":"USD"},{"qty":10,"price":"$2.24400","currency":"USD"},{"qty":100,"price":"$1.78610","currency":"USD"},{"qty":500,"price":"$1.51134","currency":"USD"},{"qty":1000,"price":"$1.28236","currency":"USD"},{"qty":2000,"price":"$1.21824","currency":"USD"},{"qty":6000,"price":"$1.17244","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4e914dd711d6d377454c6187cd37e67d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IQE006NE2LM5CGSCATMA1 RoHS compliant?","answer":"Yes, the part is listed as ROHS3 compliant, meeting the latest EU Restriction of Hazardous Substances directive."},{"question":"What is the recommended gate drive voltage for IQE006NE2LM5CGSCATMA1?","answer":"The datasheet specifies Rds(on) at both 4.5 V and 10 V gate drive. For the lowest on-resistance (0.58 mOhm), use a 10 V gate drive. If the design is limited to a 5 V logic rail, the FET will still turn on at 4.5 V, but the Rds(on) will be higher than the 10 V figure. The gate threshold is 2 V max at 250 µA, so a 3.3 V logic rail will not accidentally turn it on."},{"question":"Can IQE006NE2LM5CGSCATMA1 be used in battery protection circuits?","answer":"Yes, the 25 V Vdss and 0.58 mOhm Rds(on) make it suitable for low-voltage battery protection in applications like power tools, e-bikes, or UPS systems where the pack voltage is 12 V to 24 V. The sub-milliohm on-resistance minimizes voltage drop and heat generation during high-current discharge."},{"question":"What is the maximum junction temperature for IQE006NE2LM5CGSCATMA1?","answer":"The 150°C ceiling includes self-heating from conduction and switching losses, so the PCB thermal design must keep the junction below this limit under worst-case load."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IQE006NE2LM5CGSCATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IQE006NE2LM5CGSCATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}