{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPZ40N04S53R9ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPZ40N04S53R9ATMA1","canonicalUrl":"https://icboms.com/infineon/IPZ40N04S53R9ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPZ40N04S53R9ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™-5 IPZ40N04S53R9ATMA1 N-Channel MOSFET, 40 V Vdss, 89 A Id, 3.9 mOhm Rds(on) @ 20 A / 10 V, 25 nC Qg, PG-TSDSON-8-33, -55 to 175°C, AEC-Q101.","salesMarkdown":"## 3.9 mOhm on-resistance — what it buys the 12 V bus The IPZ40N04S53R9ATMA1 is an Infineon OptiMOS™-5 N-channel MOSFET rated for 40 V drain-source and 89 A continuous drain at 25°C junction. The headline figure is a maximum 3.9 mOhm Rds(on) at 20 A with 10 V gate drive — that keeps conduction loss under 0.8 W at 20 A, which is the difference between a heatsink and a copper-pour-only layout in an automotive ECU. ## Gate charge and switching speed Total gate charge is 25 nC at 10 V. For a 100 kHz switching regulator, that means the gate driver needs to source about 2.5 mA average current — well within a standard MOSFET driver's capability. The input capacitance (Ciss) is 1737 pF at 25 V drain, which sets the Miller plateau duration and the turn-on/turn-off delay through the driver's source/sink impedance. ## Automotive grade and temperature range The 175°C ceiling is critical for under-hood or high-side switch positions where ambient can exceed 125°C and self-heating from conduction loss pushes the die further. ## Package and footprint notes Supplied in the PG-TSDSON-8-33 package — an 8-lead PowerTDFN with an exposed drain pad on the bottom. The 58 W maximum power dissipation assumes that pad is tied to a suitable heatsink plane; without it, the junction-to-ambient thermal resistance rises sharply and the current rating derates.","metaTitle":"IPZ40N04S53R9ATMA1 OptiMOS-5 N-Channel MOSFET, 40 V, 89 A","metaDescription":"Infineon IPZ40N04S53R9ATMA1 N-channel MOSFET, 40 V Vdss, 89 A Id, 3.9 mOhm Rds(on) at 10 V. AEC-Q101 qualified, -55 to 175°C. PG-TSDSON-8-33.","metaKeywords":null},"attributes":{"series":"OptiMOS™-5","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Grade":"Automotive","Series":"OptiMOS™-5","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.4V @ 21µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"3.9mOhm @ 20A, 10V","Power Dissipation (Max)":"58W (Tc)","Supplier Device Package":"PG-TSDSON-8-33","Gate Charge (Qg) (Max) @ Vgs":"25 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"1737 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"7V, 10V","Current - Continuous Drain (Id) @ 25°C":"89A (Tj)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.97","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.97000","currency":"USD"},{"qty":10,"price":"$0.79300","currency":"USD"},{"qty":100,"price":"$0.61700","currency":"USD"},{"qty":500,"price":"$0.52298","currency":"USD"},{"qty":1000,"price":"$0.42602","currency":"USD"},{"qty":2000,"price":"$0.40105","currency":"USD"},{"qty":5000,"price":"$0.38195","currency":"USD"},{"qty":10000,"price":"$0.36432","currency":"USD"},{"qty":25000,"price":"$0.36362","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3ecca792a259a615cb500d8ebce7802d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPZ40N04S53R9ATMA1?","answer":"Maximum on-resistance is 3.9 mOhm at 20 A drain current with 10 V gate drive. At 7 V gate drive the Rds(on) is higher — the datasheet specifies drive voltage for max Rds(on) as 10 V, with a minimum recommended drive of 7 V."},{"question":"Is IPZ40N04S53R9ATMA1 AEC-Q101 qualified?","answer":"Yes, it carries AEC-Q101 qualification, which is the automotive stress-test standard for discrete semiconductors. This is the qualification tier required for Tier-1 automotive BOM approval."},{"question":"What package does IPZ40N04S53R9ATMA1 come in?","answer":"It comes in an 8-lead PowerTDFN package, supplier device package code PG-TSDSON-8-33."},{"question":"What is the gate charge of IPZ40N04S53R9ATMA1?","answer":"Total gate charge (Qg) is 25 nC maximum at 10 V gate drive. This is a moderate Qg for a 40 V / 89 A MOSFET — it keeps switching losses manageable at frequencies up to a few hundred kHz."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPZ40N04S53R9ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPZ40N04S53R9ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}