{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPW65R110CFDFKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPW65R110CFDFKSA2","canonicalUrl":"https://icboms.com/infineon/IPW65R110CFDFKSA2","factsUrl":"https://icboms.com/api/mcp/products/IPW65R110CFDFKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CFD2, N-Channel MOSFET, 650 V drain-source, 31.2 A continuous drain at 25°C case, 110 mOhm Rds(on) at 12.7 A, 10 V, TO-247-3 through-hole, -55°C to 150°C junction.","salesMarkdown":"## 110 mOhm Rds(on) at 10 V — the conduction-loss anchor IPW65R110CFDFKSA2 on-resistance is 110 mOhm maximum at 12.7 A drain current and 10 V gate drive. The 118 nC typical gate charge at 10 V sets the switching loss budget. ## 650 V blocking and 150°C junction — where it fits The 650 V drain-source rating puts this part squarely in 400 V bus applications — power-factor-correction stages, LLC resonant converters, and two-switch flyback topologies in industrial power supplies and motor drives. The TO-247-3 through-hole package (PG-TO247-3-41) handles the 277.8 W power dissipation at case temperature, but the real-world dissipation is set by the heatsink and airflow, not the package limit.","metaTitle":"IPW65R110CFDFKSA2 CoolMOS™ CFD2 N-Ch 650V 31.2A TO-247-3","metaDescription":"Infineon IPW65R110CFDFKSA2 N-channel MOSFET, 650V, 31.2A, 110mOhm Rds(on) at 10V. TO-247-3, active, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CFD2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CFD2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 1.3mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"110mOhm @ 12.7A, 10V","Power Dissipation (Max)":"277.8W (Tc)","Supplier Device Package":"PG-TO247-3-41","Gate Charge (Qg) (Max) @ Vgs":"118 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"3240 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"31.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.66","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$6.66000","currency":"USD"},{"qty":10,"price":"$5.70800","currency":"USD"},{"qty":100,"price":"$4.75680","currency":"USD"},{"qty":500,"price":"$4.19716","currency":"USD"},{"qty":1000,"price":"$3.77744","currency":"USD"},{"qty":2000,"price":"$3.53960","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b36cd2961399ee1f80f44b436f3a50df.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the exact Rds(on) of IPW65R110CFDFKSA2?","answer":"The maximum on-resistance is 110 mOhm at a drain current of 12.7 A and a gate-source voltage of 10 V. This is the value used for conduction-loss calculations in the design phase."},{"question":"Is IPW65R110CFDFKSA2 RoHS compliant?","answer":"Yes, it is rated ROHS3 Compliant, meeting the latest RoHS directive without exemptions."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPW65R110CFDFKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPW65R110CFDFKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}