{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPW65R080CFDFKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPW65R080CFDFKSA2","canonicalUrl":"https://icboms.com/infineon/IPW65R080CFDFKSA2","factsUrl":"https://icboms.com/api/mcp/products/IPW65R080CFDFKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CFD2 series, IPW65R080CFDFKSA2, N-Channel MOSFET, 650 V Vdss, 43.3 A Id, 80 mOhm Rds(on) at 10 V, 167 nC Qg, TO-247-3 through-hole, -55 to 150 °C.","salesMarkdown":"## 80 mOhm Rds(on) and 167 nC gate charge — the trade-off The IPW65R080CFDFKSA2: The 80 mOhm figure is the conduction-loss floor at 25 °C junction; at 125 °C junction it roughly doubles, so budget the thermal loop with that headroom. Input capacitance Ciss is 5030 pF at 100 V drain bias — the Miller plateau will be substantial, so the driver's sink current and the gate loop inductance determine the turn-off loss more than the Rds(on) does. ## Active production — no scavenger hunt needed It is ROHS3 compliant, and the TO-247-3 through-hole package suits high-reliability soldering processes and field-serviceable power stages where a rework station is the norm. The 650 V Vdss gives you 1.6× derating on a 400 V DC bus — enough margin for the ringing on a hard-switched half-bridge without reaching for a 700 V or 800 V part that would have higher Rds(on). The 391 W power dissipation at case temperature is the theoretical limit with an infinite heatsink — in practice the thermal pad area and airflow set the real ceiling.","metaTitle":"Infineon IPW65R080CFDFKSA2 N-Ch 650V 43.3A MOSFET, 80mOhm","metaDescription":"Infineon CoolMOS CFD2 N-channel MOSFET, 650V Vdss, 43.3A Id, 80mOhm Rds(on). Active lifecycle, TO-247-3 through-hole.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CFD2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CFD2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 1.8mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"80mOhm @ 17.6A, 10V","Power Dissipation (Max)":"391W (Tc)","Supplier Device Package":"PG-TO247-3","Gate Charge (Qg) (Max) @ Vgs":"167 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"5030 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"43.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$9.8","priceTiers":[{"qty":1,"price":"$9.80000","currency":"USD"},{"qty":10,"price":"$8.40000","currency":"USD"},{"qty":100,"price":"$7.00040","currency":"USD"},{"qty":500,"price":"$6.17680","currency":"USD"},{"qty":1000,"price":"$5.55913","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/da06dfe33d10e92e31837685fa59e3b2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPW65R080CFDFKSA2/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPW65R080CFDFKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPW65R080CFDFKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}