{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPW65R041CFDFKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPW65R041CFDFKSA2","canonicalUrl":"https://icboms.com/infineon/IPW65R041CFDFKSA2","factsUrl":"https://icboms.com/api/mcp/products/IPW65R041CFDFKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CFD2, N-Channel MOSFET, 650 V Vdss, 68.5 A Id, 41 mOhm Rds(on) @ 33.1 A 10 V, 300 nC Qg, TO-247-3, -55°C to 150°C TJ.","salesMarkdown":"## Gate charge and switching — what the 300 nC Qg means for the driver The IPW65R041CFDFKSA2: Total gate charge is 300 nC at 10 V Vgs. The 8400 pF input capacitance at 100 V Vds reinforces the need for a low-impedance drive loop. ## Package and thermal — TO-247-3 through-hole mounting The TO-247-3 (PG-TO247-3) through-hole package is rated for 500 W power dissipation at the case. The large tab and mounting hole accept a heatsink; the thermal pad area and airflow set the real junction-to-ambient resistance. It is ROHS3 compliant.","metaTitle":"Infineon IPW65R041CFDFKSA2 CoolMOS™ CFD2 N-Ch MOSFET, 650V","metaDescription":"Infineon IPW65R041CFDFKSA2 CoolMOS™ CFD2 N-channel MOSFET, 650V Vdss, 68.5A Id, 41mOhm Rds(on). Active lifecycle, TO-247-3 through-hole.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CFD2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CFD2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 3.3mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"41mOhm @ 33.1A, 10V","Power Dissipation (Max)":"500W (Tc)","Supplier Device Package":"PG-TO247-3","Gate Charge (Qg) (Max) @ Vgs":"300 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"8400 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"68.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$14.19","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$14.19000","currency":"USD"},{"qty":10,"price":"$12.50100","currency":"USD"},{"qty":100,"price":"$10.81180","currency":"USD"},{"qty":500,"price":"$9.79824","currency":"USD"},{"qty":1000,"price":"$8.98735","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ea77a1abbecc367d83dfede31a9009f8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPW65R041CFDFKSA2 obsolete?","answer":"No."},{"question":"What is the equivalent of IPW65R041CFDFKSA2?","answer":"No official direct replacement is listed. The IPD50R950CEAUMA1 is a CoolMOS™ CE device rated at 500 V and 950 mOhm — a lower-voltage, higher-resistance part that is not a functional substitute for the 650 V, 41 mOhm CFD2."},{"question":"Can I replace IRFP460 with IPW65R041CFDFKSA2?","answer":"The IRFP460 is a 500 V, 0.4 Ohm planar MOSFET in TO-247. The IPW65R041CFDFKSA2 offers a higher voltage rating (650 V) and significantly lower on-resistance (41 mOhm). Pin-compatible in TO-247-3, but the gate charge and switching characteristics differ — verify the gate drive circuit and switching losses before substitution."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPW65R041CFDFKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPW65R041CFDFKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}