{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPW65R022CFD7AXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPW65R022CFD7AXKSA1","canonicalUrl":"https://icboms.com/infineon/IPW65R022CFD7AXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPW65R022CFD7AXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPW65R022CFD7AXKSA1, N-Channel MOSFET, 650 V Vdss, 96 A Id, 22 mOhm Rds(on) @ 10 V, 234 nC Qg, TO-247-3 through hole, -40°C to 150°C TJ.","salesMarkdown":"## 650 V, 96 A automotive-class CoolMOS — what this part is The Infineon IPW65R022CFD7AXKSA1 is an N-channel CoolMOS power MOSFET from the automotive-qualified CFD7 series. The AUTOMOTIVE_COOLMOS designation signals qualification for automotive-grade applications such as traction inverters, on-board chargers, and high-voltage DC-DC converters. The gate charge of 234 nC at 10 V is substantial — this is not a small-signal FET. The driver stage needs to source several amperes peak to achieve the switching speeds the datasheet assumes. The input capacitance of 11659 pF at 400 V Vds confirms the gate drive must be designed for a high capacitive load. The 10 V drive voltage is the nominal operating point; the threshold voltage maximum is 4.5 V at 2.91 mA, so the device is not a logic-level part and will not fully enhance at 5 V gate drive. ## Thermal and mechanical fit for the BOM The maximum power dissipation is 446 W at the case. The TO-247-3 package requires a through-hole mounting process and a heatsink with a mounting hole; it is not a reflow part. The part is ROHS3 compliant.","metaTitle":"Infineon IPW65R022CFD7AXKSA1 CoolMOS N-Ch 650V 96A MOSFET","metaDescription":"Infineon IPW65R022CFD7AXKSA1 CoolMOS N-channel MOSFET, 650V Vdss, 96A Id, 22mOhm Rds(on), TO-247-3. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 2.91mA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"22mOhm @ 58.2A, 10V","Power Dissipation (Max)":"446W (Tc)","Supplier Device Package":"PG-TO247-3","Gate Charge (Qg) (Max) @ Vgs":"234 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"11659 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"96A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$22.27","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$22.27000","currency":"USD"},{"qty":10,"price":"$19.78900","currency":"USD"},{"qty":100,"price":"$17.30780","currency":"USD"},{"qty":500,"price":"$14.76934","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d38731241637843a0a086d8382b13d02.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPW65R022CFD7AXKSA1 obsolete or EOL?","answer":"Infineon has not issued an end-of-life notice for this order code as of the current record."},{"question":"What is the direct equivalent or replacement for IPW65R022CFD7AXKSA1?","answer":"Infineon does not list a direct pin-compatible second source for this exact order code. The IPD50R950CEAUMA1 is a different part — 500 V, 4.3 A, surface-mount DPAK — and is not a functional replacement. For a same-spec alternate, the IPW65R024CFD7 (24 mOhm variant in the same CFD7 family) is the closest parametric sibling, but verify the Rds(on) difference against your conduction loss budget."},{"question":"What is the gate drive requirement for IPW65R022CFD7AXKSA1?","answer":"The device requires a 10 V gate drive for the rated on-resistance. The maximum gate-source voltage is ±20 V. The threshold voltage maximum is 4.5 V at 2.91 mA, so a 5 V logic-level drive will not fully enhance the channel. The gate charge is 234 nC at 10 V, which requires a gate driver capable of sourcing several amperes peak for fast switching."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPW65R022CFD7AXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPW65R022CFD7AXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}