{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPW60R045CPAFKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPW60R045CPAFKSA1","canonicalUrl":"https://icboms.com/infineon/IPW60R045CPAFKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPW60R045CPAFKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPW60R045CPAFKSA1, N-Channel MOSFET, 600 V Vdss, 60 A Id, 45 mOhm Rds(on) @ 44 A, 10 V, PG-TO247-3, AEC-Q101, -40°C to 150°C.","salesMarkdown":"## 600 V CoolMOS with automotive-grade gate The 45 mOhm typical on-resistance at 44 A and 10 V drive sets the conduction loss floor for high-efficiency switching stages. This part belongs to the CoolMOS family, Infineon's charge-compensation superjunction platform that delivers low Rds(on) per silicon area. The 190 nC total gate charge at 10 V Vgs gives the designer a concrete number for sizing the gate-drive supply and estimating switching losses at the target frequency. ## On-resistance and switching charge That 10 V drive voltage is the recommended rail for achieving the rated on-resistance; driving below 10 V leaves Rds(on) headroom on the table. Gate charge totals 190 nC at 10 V, with an input capacitance of 6800 pF at 100 V drain-source. The combination of moderate gate charge and low Rds(on) suits this part for hard-switching topologies like PFC boost stages and DC-DC converters in the 1 kW to 3 kW range. ## Temperature envelope and power dissipation Maximum power dissipation is 431 W at the case, but the real thermal limit depends on the heatsink and airflow — the junction-to-case thermal path is the constraint in a TO-247 package. ## Active lifecycle and compliance It is ROHS3 compliant, which clears the restriction-of-hazardous-substances gate for current-generation designs.","metaTitle":"Infineon IPW60R045CPAFKSA1 CoolMOS N-Ch MOSFET, 600 V, 60 A","metaDescription":"Infineon IPW60R045CPAFKSA1 CoolMOS N-channel MOSFET, 600 V Vdss, 60 A Id, 45 mOhm Rds(on). AEC-Q101 qualified for automotive. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Grade":"Automotive","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Qualification":"AEC-Q101","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 3mA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"45mOhm @ 44A, 10V","Power Dissipation (Max)":"431W (Tc)","Supplier Device Package":"PG-TO247-3","Gate Charge (Qg) (Max) @ Vgs":"190 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"6800 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"60A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$24.71","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$19.76000","currency":"USD"},{"qty":10,"price":"$17.40700","currency":"USD"},{"qty":100,"price":"$15.05480","currency":"USD"},{"qty":500,"price":"$13.64342","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8d092f87caf676aef8110b179aa6d16b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPW60R045CPAFKSA1 AEC-Q101 qualified?","answer":"Yes, the IPW60R045CPAFKSA1 is qualified to AEC-Q101, the automotive stress-test qualification for discrete semiconductors. This qualification covers the temperature range, reliability testing, and lot-traceability requirements for automotive and high-reliability industrial applications."},{"question":"What is the Rds(on) of IPW60R045CPAFKSA1?","answer":"The maximum on-resistance is 45 mOhm at a drain current of 44 A with a 10 V gate-source drive. This is the figure to use for worst-case conduction loss calculations at the rated operating point."},{"question":"What is the gate charge of IPW60R045CPAFKSA1?","answer":"Total gate charge is 190 nC at a 10 V gate drive. This value is used to calculate the gate-drive power: Pgate = Qg × Vgs × fsw. At 100 kHz switching, the gate-drive power is roughly 190 mW."},{"question":"Is IPW60R045CPAFKSA1 RoHS compliant?","answer":"Yes, the part is ROHS3 compliant, meeting the current RoHS directive restrictions on lead, mercury, cadmium, and other substances."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPW60R045CPAFKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPW60R045CPAFKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}