{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPT60R102G7XTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPT60R102G7XTMA1","canonicalUrl":"https://icboms.com/infineon/IPT60R102G7XTMA1","factsUrl":"https://icboms.com/api/mcp/products/IPT60R102G7XTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ G7 N-Channel MOSFET, IPT60R102G7XTMA1, 600V Vdss, 23A Id, 102mOhm Rds(on), 34nC Qg, PG-HSOF-8-2, -55°C to 150°C.","salesMarkdown":"## 600 V CoolMOS G7 — switching loss and conduction floor The gate threshold voltage is 4 V maximum at 390 µA drain current, meaning the device requires a gate drive above 4 V to begin conducting; the 10 V drive level is recommended to achieve the specified 102 mOhm Rds(on). Maximum gate-source voltage is ±20 V, so the gate drive circuit must be clamped to avoid exceeding this limit during switching transients or ringing. Input capacitance is 1320 pF maximum at 400 V drain-source, which together with the 34 nC gate charge defines the switching losses and the driver's peak current requirement.","metaTitle":"Infineon IPT60R102G7XTMA1 CoolMOS G7 N-Ch MOSFET, 600V, 23A","metaDescription":"Infineon IPT60R102G7XTMA1 CoolMOS G7 N-Channel MOSFET: 600V Vdss, 23A Id, 102mOhm Rds(on), 34nC Qg. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™ G7","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ G7","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerSFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 390µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"102mOhm @ 7.8A, 10V","Power Dissipation (Max)":"141W (Tc)","Supplier Device Package":"PG-HSOF-8-2","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1320 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"23A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.06","priceTiers":[{"qty":1,"price":"$6.21000","currency":"USD"},{"qty":10,"price":"$5.21600","currency":"USD"},{"qty":100,"price":"$4.21990","currency":"USD"},{"qty":500,"price":"$3.75106","currency":"USD"},{"qty":1000,"price":"$3.21184","currency":"USD"},{"qty":2000,"price":"$3.02429","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ab40ad777ae65cdaacef44f3fddf4889.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPT60R102G7XTMA1/alternatives.json"},"ai":{"faq":[{"question":"What are the equivalent parts to IPT60R102G7XTMA1?","answer":"The IPD50R950CEAUMA1 is a lower-voltage (500 V) and lower-current (4.3 A) CoolMOS CE part with 950 mOhm Rds(on). It is not a direct functional replacement — the IPT60R102G7XTMA1 offers significantly higher voltage (600 V), current (23 A), and lower on-resistance (102 mOhm), targeting a higher power tier."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPT60R102G7XTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPT60R102G7XTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}