{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPT60R028G7XTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPT60R028G7XTMA1","canonicalUrl":"https://icboms.com/infineon/IPT60R028G7XTMA1","factsUrl":"https://icboms.com/api/mcp/products/IPT60R028G7XTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ G7, N-Channel MOSFET, 600 V Vdss, 75 A Id @ 25°C, 28 mOhm Rds(on) @ 28.8 A, 10 V, PG-HSOF-8-2, Surface Mount, -55°C to 150°C.","salesMarkdown":"## Thermal and package realities The IPT60R028G7XTMA1: The PG-HSOF-8-2 can sink 391 W dissipation at the case — but that number assumes an ideal thermal interface and a cold plate. In a real layout, the 75 A continuous rating is thermally limited; the engineer sizes the copper area under the drain pad and the heatsinking path accordingly. The ±20 V Vgs max leaves headroom for gate-drive overshoot, though 10 V is the recommended drive for the rated Rds(on). Active product status, ROHS3 compliant. No direct pin-compatible second source is listed in the evidence.","metaTitle":"Infineon IPT60R028G7XTMA1 CoolMOS G7 N-Ch 600V 75A MOSFET","metaDescription":"Infineon IPT60R028G7XTMA1 CoolMOS G7 N-channel MOSFET, 600V Vdss, 75A Id, 28mOhm Rds(on). Active, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolMOS™ G7","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ G7","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerSFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1.44mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"28mOhm @ 28.8A, 10V","Power Dissipation (Max)":"391W (Tc)","Supplier Device Package":"PG-HSOF-8-2","Gate Charge (Qg) (Max) @ Vgs":"123 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"4820 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"75A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$22.83","priceTiers":[{"qty":1,"price":"$22.83000","currency":"USD"},{"qty":10,"price":"$20.98300","currency":"USD"},{"qty":100,"price":"$17.72120","currency":"USD"},{"qty":500,"price":"$15.85482","currency":"USD"},{"qty":2000,"price":"$13.58985","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/af656a10e7abce90cead62e7ab06a3fa.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPT60R028G7XTMA1/alternatives.json"},"ai":{"faq":[{"question":"Is IPT60R028G7XTMA1 active or obsolete?","answer":"Active. The product status is listed as Active, with no last-time-buy or end-of-life notice. It is a current-production CoolMOS G7 device."},{"question":"What is the Rds(on) and what does it mean for my design?","answer":"Max Rds(on) is 28 mOhm at 28.8 A drain current with a 10 V gate drive. That is a low conduction-loss figure for a 600 V MOSFET — at 28.8 A the dissipation is roughly 23 W from Rds(on) alone. It keeps the heatsink manageable in a 75 A-rated part, but the designer must still account for the 123 nC gate charge when sizing the gate-drive circuit."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPT60R028G7XTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPT60R028G7XTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}