{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPT020N10N5ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPT020N10N5ATMA1","canonicalUrl":"https://icboms.com/infineon/IPT020N10N5ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPT020N10N5ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™5, N-Channel MOSFET, 100 V drain-source, 2 mOhm Rds(on) max at 150 A / 10 V, 260 A continuous drain (Tc), PG-HSOF-8-1 surface-mount package, -55°C to 175°C junction temperature.","salesMarkdown":"## 100 V, 2 mOhm — why this Rds(on) matters for your switching stage The IPT020N10N5ATMA1 is an Infineon OptiMOS™5 N-channel MOSFET with a maximum drain-to-source voltage of 100 V and a maximum on-resistance of 2 mOhm at 150 A drain current with 10 V gate drive. That 2 mOhm figure is the number that sets the conduction loss floor in a high-current 48 V bus converter, a 12 V automotive alternator rectifier stage, or an 80 V intermediate rail where every milliohm costs watts in the thermal budget. ## Current rating — case temperature vs. ambient The continuous drain current is rated 260 A at the case (Tc) and 31 A at ambient (Ta) at 25°C. The 31 A ambient figure is the real-world limit for a bare board with no heatsink; the 260 A case rating assumes the package bottom is held at 25°C through a thermal interface to a cold plate or large copper area. The 273 W maximum power dissipation at case temperature sets the SOA boundary — the designer sizes the heatsink to keep TJ below 175°C at the target load current. ## Gate charge and drive voltage Total gate charge is 152 nC at 10 V gate drive. For a 100 kHz hard-switching stage, that means 15.2 mA average gate-drive current from the driver IC. The drive voltage range (6 V to 10 V for minimum Rds(on)) lets the designer trade gate-drive rail complexity against conduction loss — 10 V gives the full 2 mOhm, while 6 V still achieves the rated on-resistance at a slightly higher value. The ±20 V Vgs max provides margin for ringing on the gate node in a fast-switching layout. ## Package and thermal interface The PG-HSOF-8-1 package (8-PowerSFN) is a surface-mount HSOF with an exposed drain pad on the bottom. The 11000 pF input capacitance at 50 V drain-source tells the layout engineer to place the gate-driver output within 10 mm of the gate pin and to use a dedicated source-Kelvin return if the switching frequency exceeds 50 kHz.","metaTitle":"IPT020N10N5ATMA1 Infineon OptiMOS 5 N-Ch 100V MOSFET, 2mOhm","metaDescription":"Infineon IPT020N10N5ATMA1 OptiMOS 5 N-channel 100V MOSFET, 2mOhm Rds(on) max, 260A Id, 175°C TJ. Active, RoHS3.","metaKeywords":null},"attributes":{"series":"OptiMOS™5","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™5","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerSFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 202µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"2mOhm @ 150A, 10V","Power Dissipation (Max)":"273W (Tc)","Supplier Device Package":"PG-HSOF-8-1","Gate Charge (Qg) (Max) @ Vgs":"152 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"11000 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"31A (Ta), 260A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.37","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$7.37000","currency":"USD"},{"qty":10,"price":"$6.66100","currency":"USD"},{"qty":100,"price":"$5.51500","currency":"USD"},{"qty":500,"price":"$4.80242","currency":"USD"},{"qty":1000,"price":"$4.71485","currency":"USD"},{"qty":2000,"price":"$4.71485","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/Infineon-IPT020N10N5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016ac02955ee32f4","sourceUrl":null},"ai":{"faq":[{"question":"Is IPT020N10N5ATMA1 RoHS compliant?","answer":"Yes, the IPT020N10N5ATMA1 is listed as ROHS3 compliant."},{"question":"Can IPT020N10N5ATMA1 be used as a replacement for other 100 V MOSFETs?","answer":"The IPT020N10N5ATMA1 is a 100 V N-channel MOSFET in a PG-HSOF-8-1 package. Any replacement evaluation must confirm the footprint (drain-pad size and pinout), gate-drive voltage range (6 V to 10 V), and the 152 nC gate charge — a higher Qg part may exceed the driver's peak current capability at the target switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPT020N10N5ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPT020N10N5ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}