{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPT017N10NF2SATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPT017N10NF2SATMA1","canonicalUrl":"https://icboms.com/infineon/IPT017N10NF2SATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPT017N10NF2SATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon StrongIRFET™ 2, N-Channel MOSFET, 100 V, 294 A (Tc), 1.75 mOhm @ 150 A, 10 V, ±20 V Vgs, PG-HSOF-8, -55°C to 175°C.","salesMarkdown":"## 100 V, 1.75 mOhm — StrongIRFET™ 2 power switch The IPT017N10NF2SATMA1 is a 100 V N-Channel StrongIRFET™ 2 MOSFET in a PG-HSOF-8 surface-mount package. ## Conduction loss and gate-drive budget At 150 A and 10 Vgs, the 1.75 mOhm Rds(on) produces a conduction loss of about 39 W — the dominant term in a hard-switched design. The 195 nC total gate charge at 10 V sets the gate-drive power: at 100 kHz switching, the average gate current is roughly 19.5 mA, and the peak current during the Miller plateau depends on the driver's source/sink capability. The 9300 pF input capacitance at 50 V Vds influences the turn-on delay and the driver's ability to charge Ciss quickly. ## Current handling and thermal limits Continuous drain current is rated at 33 A with the device at 25°C ambient (Ta) and 294 A when the case is held at 25°C (Tc). The 300 W power dissipation at Tc is the thermal budget for the package — a heatsink that keeps the case temperature low is required to use the full 294 A rating. ## Lifecycle and procurement posture It is ROHS3 compliant.","metaTitle":"Infineon IPT017N10NF2SATMA1 N-Channel MOSFET, 100 V","metaDescription":"Infineon StrongIRFET™ 2 N-channel MOSFET, 100 V, 294 A, 1.75 mOhm Rds(on). PG-HSOF-8 package. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"StrongIRFET™ 2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"StrongIRFET™ 2","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerSFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 216µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.75mOhm @ 150A, 10V","Power Dissipation (Max)":"3.8W (Ta), 300W (Tc)","Supplier Device Package":"PG-HSOF-8","Gate Charge (Qg) (Max) @ Vgs":"195 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"9300 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"33A (Ta), 294A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.76","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.76000","currency":"USD"},{"qty":10,"price":"$4.83500","currency":"USD"},{"qty":100,"price":"$3.91140","currency":"USD"},{"qty":500,"price":"$3.47682","currency":"USD"},{"qty":1800,"price":"$2.97703","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d4b8d6a700bfc2c76369ae3370aee964.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPT017N10NF2SATMA1 compatible with PG-HSOF-8 footprint?","answer":"Yes, the supplier device package is PG-HSOF-8 (8-PowerSFN). The footprint is standard for this package; verify the PCB land pattern against the Infineon application note for the PG-HSOF-8."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPT017N10NF2SATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPT017N10NF2SATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}