{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPS70R600P7SAKMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPS70R600P7SAKMA1","canonicalUrl":"https://icboms.com/infineon/IPS70R600P7SAKMA1","factsUrl":"https://icboms.com/api/mcp/products/IPS70R600P7SAKMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P7 series, IPS70R600P7SAKMA1, N-Channel MOSFET, 700 V Vdss, 8.5 A Id, 600 mOhm Rds(on) @ 1.8 A, 10 V, 10.5 nC Qg, PG-TO251-3 through-hole package, -40°C to 150°C operating junction temperature.","salesMarkdown":"## 700 V N-channel for high-voltage switched-mode supplies The Infineon IPS70R600P7SAKMA1 is a 700 V N-channel power MOSFET from the CoolMOS P7 series, built on a charge-compensation superjunction technology that cuts the on-resistance per silicon area compared to planar MOSFETs of the same voltage class. The 10.5 nC total gate charge at 10 V keeps the gate-drive power manageable in hard-switched topologies. ## Through-hole TO-251-3 package and thermal path Housed in a PG-TO251-3 through-hole package with short leads (IPak), the IPS70R600P7SAKMA1 is designed for board-level mounting where the tab is soldered to a copper pad on the PCB — the thermal resistance to ambient depends on the pad area and airflow, not the package alone. The 43 W power dissipation rating at case temperature (Tc) assumes an infinite heatsink; in practice the designer must derate based on the actual junction-to-ambient thermal resistance of the board layout. ## Active lifecycle and compliance ROHS3 compliant, meeting the current EU restriction-of-hazardous-substances directive for lead-free soldering processes. ## Parametric contrast with a surface-mount sibling The closest peer in the Infineon portfolio is the IPD50R950CEAUMA1, a 500 V CoolMOS CE series device in a surface-mount package. The IPS70R600P7SAKMA1 carries a 200 V higher drain-source breakdown (700 V vs 500 V), nearly double the continuous current rating (8.5 A vs 4.3 A), and a lower Rds(on) (600 mOhm vs 950 mOhm). The IPD50R950CEAUMA1 uses a wider ±20 V gate drive and operates down to -55°C, but the IPS70R600P7SAKMA1's through-hole package suits designs where the MOSFET is heatsunk to the chassis or a large copper pour — not a direct second-source, but a functional alternative if the voltage and current headroom align.","metaTitle":"Infineon IPS70R600P7SAKMA1 CoolMOS P7 N-Ch 700V 8.5A MOSFET","metaDescription":"Infineon IPS70R600P7SAKMA1 CoolMOS P7 N-channel MOSFET, 700V Vdss, 8.5A Id, 600mOhm Rds(on) at 10V. TO-251-3 through-hole. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™ P7","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ P7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 90µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 1.8A, 10V","Power Dissipation (Max)":"43W (Tc)","Supplier Device Package":"PG-TO251-3","Gate Charge (Qg) (Max) @ Vgs":"10.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"700 V","Input Capacitance (Ciss) (Max) @ Vds":"364 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.04","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.88000","currency":"USD"},{"qty":10,"price":"$0.76500","currency":"USD"},{"qty":100,"price":"$0.52970","currency":"USD"},{"qty":500,"price":"$0.44262","currency":"USD"},{"qty":1000,"price":"$0.37669","currency":"USD"},{"qty":2000,"price":"$0.33549","currency":"USD"},{"qty":5000,"price":"$0.31783","currency":"USD"},{"qty":10000,"price":"$0.29429","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/bb9019eb7823d914e64371f15fd90057.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the recommended gate drive voltage for the IPS70R600P7SAKMA1?","answer":"A 10 V to 12 V gate drive is the practical range for hard-switched applications."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPS70R600P7SAKMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPS70R600P7SAKMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}