{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP80R750P7XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP80R750P7XKSA1","canonicalUrl":"https://icboms.com/infineon/IPP80R750P7XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP80R750P7XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P7 series, IPP80R750P7XKSA1, N-channel MOSFET, 800 V Vdss, 7 A Id, 750 mOhm Rds(on) at 10 V, 17 nC Qg, TO-220-3 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 800 V N-channel MOSFET for high-voltage switching Its 800 V drain-source breakdown and 7 A continuous drain current target the primary-side switch in offline flyback converters, PFC boost stages, and auxiliary power supplies where the DC bus sits at 400 V or higher. ## Gate charge and switching loss budget Total gate charge is 17 nC at 10 V, which is low for an 800 V rated device. A standard gate driver delivering 1 A can switch this MOSFET in under 20 ns, keeping crossover losses low in hard-switched topologies up to about 100 kHz. The input capacitance of 460 pF at 500 V means the driver sees a light capacitive load — no special high-current buffer needed for moderate frequencies. ## Through-hole TO-220-3 mounting and thermal path The PG-TO220-3 package is a standard three-lead through-hole power package with a metal tab for heatsink attachment.","metaTitle":"Infineon IPP80R750P7XKSA1 CoolMOS™ P7 N-Ch MOSFET, 800 V","metaDescription":"Infineon IPP80R750P7XKSA1 N-channel 800 V MOSFET, 750 mOhm Rds(on), 17 nC gate charge, TO-220-3. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™ P7","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ P7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 140µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"750mOhm @ 2.7A, 10V","Power Dissipation (Max)":"51W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"460 pF @ 500 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.18","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.18000","currency":"USD"},{"qty":10,"price":"$1.95500","currency":"USD"},{"qty":100,"price":"$1.57140","currency":"USD"},{"qty":500,"price":"$1.29108","currency":"USD"},{"qty":1000,"price":"$1.07590","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2c7f820e5217d6e4dbf27d10e6b58327.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the on-resistance (Rds(on)) of IPP80R750P7XKSA1?","answer":"The maximum on-resistance is 750 mOhm at a drain current of 2.7 A and a gate-source voltage of 10 V. This value is measured at 25 °C junction; expect the resistance to increase by about 50 % at 125 °C junction temperature."},{"question":"Is IPP80R750P7XKSA1 RoHS compliant?","answer":"Yes, the part is ROHS3 compliant, meaning it meets the EU RoHS directive with no restricted substances above the threshold limits."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP80R750P7XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP80R750P7XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}