{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP65R660CFD","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP65R660CFD","canonicalUrl":"https://icboms.com/infineon/IPP65R660CFD","factsUrl":"https://icboms.com/api/mcp/products/IPP65R660CFD","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS N-Channel Power MOSFET, 650 V drain-source, 6 A continuous drain, 660 mOhm on-resistance at 10 V gate drive, 22 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 660 mOhm Rds(on) — conduction loss budget The IPP65R660CFD: Rds(on) is 660 mOhm at 2.1 A, 10 V gate drive. The 62.5 W power dissipation rating at case temperature provides headroom for a heatsink in continuous operation. ## 22 nC gate charge — drive stage sizing Total gate charge is 22 nC at 10 V, with an input capacitance of 615 pF at 100 V drain-source. This low Qg suits medium-frequency switching (typically 50–150 kHz) without requiring a high-current gate driver. A standard 1 A driver can charge the gate in under 30 ns, keeping switching losses manageable. The ±20 V maximum gate rating allows direct drive from a 12 V or 15 V regulated supply without external clamping.","metaTitle":"Infineon IPP65R660CFD N-Channel Power MOSFET, 650 V, 6 A","metaDescription":"Infineon IPP65R660CFD CoolMOS N-channel MOSFET, 650 Vdss, 6 A continuous drain, 660 mOhm Rds(on). Active production.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 200µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"660mOhm @ 2.1A, 10V","Power Dissipation (Max)":"62.5W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"22 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"615 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.65","stockQuantity":0,"priceTiers":[{"qty":460,"price":"$0.65000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/482a433dd9c631ec28249fa04f98f245.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPP65R660CFD compatible with 5V gate drive?","answer":"The gate threshold voltage is 4.5 V maximum at 200 µA drain current, but the Rds(on) is specified at 10 V drive. At 5 V gate drive the on-resistance will be significantly higher than the 660 mOhm maximum — expect 2–3× the rated value. For full performance, use a 10 V gate drive as recommended."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP65R660CFD","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP65R660CFD when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}