{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP65R125C7XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP65R125C7XKSA1","canonicalUrl":"https://icboms.com/infineon/IPP65R125C7XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP65R125C7XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ C7 N-Channel MOSFET, IPP65R125C7XKSA1, 650 V Vdss, 18 A Id, 125 mOhm Rds(on) @ 10 V, 35 nC Qg, TO-220-3 through-hole, -55 to 150 °C.","salesMarkdown":"The IPP65R125C7XKSA1: Rds(on) is 125 mOhm at 10 V gate drive, 8.9 A. Gate charge is 35 nC at 10 V. ## Switching loss budget and the 1670 pF input capacitance Input capacitance Ciss is 1670 pF at 400 V Vds. Maximum gate-source voltage is ±20 V. ## Thermal handling and the TO-220 package Maximum power dissipation is 101 W at case temperature Tc, but the real limit depends on the heatsink and airflow. Threshold voltage Vgs(th) is 4 V max at 440 µA Id. ROHS3 compliant, which covers the latest EU exemption updates; no conflict with RoHS-driven BOM requirements.","metaTitle":"Infineon IPP65R125C7XKSA1 CoolMOS C7 N-Ch MOSFET","metaDescription":"Infineon IPP65R125C7XKSA1 CoolMOS C7 N-channel MOSFET: 650V Vdss, 125mOhm Rds(on), 35nC gate charge, TO-220-3. Active lifecycle.","metaKeywords":null},"attributes":{"series":"CoolMOS™ C7","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ C7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 440µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"125mOhm @ 8.9A, 10V","Power Dissipation (Max)":"101W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1670 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.91","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.91000","currency":"USD"},{"qty":10,"price":"$4.12200","currency":"USD"},{"qty":100,"price":"$3.33460","currency":"USD"},{"qty":500,"price":"$2.96406","currency":"USD"},{"qty":1000,"price":"$2.53798","currency":"USD"},{"qty":2000,"price":"$2.38978","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/09672308d1e787b0a34ddafabe219934.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between CoolMOS C7 and P7?","answer":"CoolMOS C7 is Infineon's high-voltage MOSFET platform optimised for fast switching in hard-switching topologies like PFC and LLC converters, with low gate charge and low Rds(on). The P7 series targets ease-of-use with a wider SOA and more robust body diode for resonant topologies. The C7 typically has lower Qg and faster switching edges, while P7 offers better ruggedness in soft-switching applications."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP65R125C7XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP65R125C7XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}