{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP65R110CFDXKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP65R110CFDXKSA2","canonicalUrl":"https://icboms.com/infineon/IPP65R110CFDXKSA2","factsUrl":"https://icboms.com/api/mcp/products/IPP65R110CFDXKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CFD2, N-Channel MOSFET, 650 V Vdss, 31.2 A Id, 110 mOhm Rds(on) @ 12.7 A, 10 V, 118 nC Qg, TO-220-3, Through Hole, -55°C to 150°C.","salesMarkdown":"## 650 V switching in a TO-220 — the CoolMOS CFD2 choice The IPP65R110CFDXKSA2 is rated at 650 V Vdss, suitable for power factor correction stages, flyback converters, and LLC resonant topologies in industrial and telecom power supplies. ## 110 mOhm Rds(on) — conduction loss anchor At 31.2 A full load, conduction loss at 110 mOhm (ignoring temperature derating) is roughly 107 W; the 277.8 W maximum power dissipation in the TO-220 package gives thermal headroom for a properly heatsinked design, but the actual junction temperature rise must be calculated against the operating current and switching losses. ## Gate charge and switching speed Total gate charge is 118 nC at 10 V gate drive, with an input capacitance of 3240 pF at 100 V drain-source — these numbers set the switching driver requirement and the transition loss budget. A gate driver capable of sourcing and sinking a few amperes peak is needed to charge and discharge 118 nC within the target dead-time; the ±20 V maximum gate-source rating accommodates standard gate drive levels with margin.","metaTitle":"Infineon IPP65R110CFDXKSA2 CoolMOS CFD2 N-Ch 650V 31.2A","metaDescription":"Infineon IPP65R110CFDXKSA2 N-channel MOSFET, 650V Vdss, 31.2A Id, 110mOhm Rds(on). CoolMOS CFD2 series in TO-220-3. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CFD2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CFD2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 1.3mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"110mOhm @ 12.7A, 10V","Power Dissipation (Max)":"277.8W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"118 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"3240 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"31.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.25","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$6.25000","currency":"USD"},{"qty":10,"price":"$5.35400","currency":"USD"},{"qty":100,"price":"$4.46150","currency":"USD"},{"qty":500,"price":"$3.93658","currency":"USD"},{"qty":1000,"price":"$3.54292","currency":"USD"},{"qty":2000,"price":"$3.31985","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b36cd2961399ee1f80f44b436f3a50df.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can I use the IPP65R110CFDXKSA2 in a 400V DC bus application?","answer":"Yes. The 650 V drain-source rating provides 250 V of headroom above a 400 V DC bus, which is typical for power factor correction and flyback stages. The margin covers switching overshoot and line transients."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP65R110CFDXKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP65R110CFDXKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}