{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP60R750E6","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP60R750E6","canonicalUrl":"https://icboms.com/infineon/IPP60R750E6","factsUrl":"https://icboms.com/api/mcp/products/IPP60R750E6","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS ™ series, N-Channel MOSFET, 600 V Vdss, 5.7 A continuous drain at 25°C, 750 mOhm Rds(on) at 2 A, 10 V, 17.2 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"The 750 mOhm Rds(on) at 2 A and 10 V is a moderate on-resistance for a 600 V device, which means conduction losses are not the primary concern in this part. This combination makes the IPP60R750E6 a good fit for medium-frequency hard-switching designs where switching losses dominate the thermal budget, rather than high-current continuous conduction. ## Package and mounting — through-hole for thermal and mechanical robustness The TO-220-3 through-hole package (Infineon code PG-TO220-3-1) allows direct mounting to a heatsink with a single screw. The device is ROHS3 compliant, with no lead, mercury, cadmium, or other restricted substances above threshold limits. No end-of-life notices or last-time-buy windows are in effect for this ordering code.","metaTitle":"Infineon IPP60R750E6 CoolMOS E6 N-Channel MOSFET, 600 V","metaDescription":"Infineon IPP60R750E6 CoolMOS E6 N-channel MOSFET, 600 V Vdss, 5.7 A continuous drain, 750 mOhm Rds(on) at 10 V. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS E6™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS E6™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 170µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"750mOhm @ 2A, 10V","Power Dissipation (Max)":"48W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"17.2 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"373 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.51","priceTiers":[{"qty":593,"price":"$0.51000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/30a459f0448e57b80c047ca00b3795ce.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPP60R750E6/alternatives.json"},"ai":{"faq":[{"question":"Is IPP60R750E6 RoHS compliant?","answer":"Yes, the IPP60R750E6 is ROHS3 compliant, meeting the latest European Union directive on restriction of hazardous substances."},{"question":"What is the closest functional second-source for IPP60R750E6?","answer":"A functional alternative is the Infineon IPD50R950CEAUMA1, a 500 V N-channel CoolMOS CE device in a surface-mount package (DPAK). It offers a 950 mOhm Rds(on) at 1.2 A and 13 V, and a 10.5 nC gate charge. Note the lower voltage rating (500 V vs 600 V) and different package — verify pin compatibility and voltage headroom before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP60R750E6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP60R750E6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-13T21:05:34.174Z","lastPublished":"2026-07-13T21:05:34.174Z","indexable":true}}