{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP60R600CP","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP60R600CP","canonicalUrl":"https://icboms.com/infineon/IPP60R600CP","factsUrl":"https://icboms.com/api/mcp/products/IPP60R600CP","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ series, N-Channel MOSFET, 600 V Vdss, 6.1 A Id, 600 mOhm Rds(on) @ 10 V, 27 nC Qg, TO-220-3 through-hole, -55 to 150 °C TJ.","salesMarkdown":"## Gate charge and drive — what 27 nC means for the BOM It keeps the gate-drive energy per switching cycle low. ## Package and mounting — TO-220-3 through-hole The IPP60R600CP is supplied in the through-hole TO-220-3 package, Infineon code PG-TO220-3-1. The three-lead vertical-mount form factor is the standard for heatsink-clip or screw-mount attachment on a PCB or chassis. The metal tab is the drain. For thermal design, the maximum power dissipation is 60 W at the case temperature, but the actual allowable dissipation depends on heatsink thermal resistance and ambient conditions — derate per the thermal impedance curve in the datasheet. It is ROHS3 compliant.","metaTitle":"Infineon IPP60R600CP CoolMOS N-Ch MOSFET, 600 V, 6.1 A","metaDescription":"Infineon IPP60R600CP CoolMOS N-channel power MOSFET, 600 V Vdss, 6.1 A Id, 600 mOhm Rds(on), TO-220-3. Active lifecycle, RoHS3.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 220µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 3.3A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"27 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"550 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6.1A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.64","priceTiers":[{"qty":469,"price":"$0.64000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6376d7be8eed170c2a1aa08277bb4cf3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPP60R600CP/alternatives.json"},"ai":{"faq":[{"question":"What is the gate charge of IPP60R600CP?","answer":"The maximum gate charge (Qg) at 10 V gate drive is 27 nC. This value determines the energy per switching cycle the gate driver must supply."},{"question":"IPP60R600CP vs IPP60R380CP: what are the differences?","answer":"The IPP60R380CP is a higher-current variant in the same 600 V CoolMOS family, with a lower Rds(on) of 380 mOhm and a higher drain current rating. The IPP60R600CP has a 600 mOhm Rds(on) and 6.1 A Id. The IPP60R380CP suits designs requiring lower conduction loss at higher current, while the IPP60R600CP fits applications where the slightly higher Rds(on) is acceptable and the lower gate charge may simplify the gate-drive budget."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP60R600CP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP60R600CP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}