{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP60R060C7XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP60R060C7XKSA1","canonicalUrl":"https://icboms.com/infineon/IPP60R060C7XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP60R060C7XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ C7 series, IPP60R060C7XKSA1, N-Channel MOSFET, 600 V Vdss, 35 A Id, 60 mOhm Rds(on) at 10 V, 68 nC Qg, -55 to 150 °C, PG-TO220-3, Through Hole.","salesMarkdown":"## 600 V, 35 A N-channel in a TO-220 — the workhorse PFC switch The IPP60R060C7XKSA1: This is the part you reach for when a boost PFC stage, an LLC half-bridge, or a flyback primary switch needs a through-hole TO-220-3 package that can be bolted to a heatsink and dissipate 162 W at the case. The 68 nC total gate charge at 10 V is moderate for this voltage class. Drain-source voltage is rated 600 V. Input capacitance Ciss is 2850 pF at 400 V drain-source — that's the Miller plateau charge the driver must push through during the switching transition. The 68 nC Qg total at 10 V means a driver sourcing 1 A can turn the FET on in about 68 ns, which is fast enough for 100 kHz hard-switching without excessive ringing if the gate loop inductance is kept under 10 nH. Gate threshold voltage is specified at 4 V maximum with 800 µA drain current — a standard 10 V gate drive saturates the channel fully, pulling Rds(on) to its rated minimum. The ±20 V maximum gate-source rating gives margin for overshoot on a 12 V or 15 V gate drive rail. The TO-220-3 package is a standard through-hole form factor that stores well on the shelf; no special dry-pack requirements beyond the normal anti-static bag. ROHS3 compliance is confirmed, which keeps it compatible with lead-free assembly processes and avoids the restricted-substance compliance checks that older parts sometimes trigger. ## Where it fits — power conversion and industrial drives The 600 V / 35 A rating with 60 mOhm Rds(on) places this MOSFET squarely in the sweet spot for 1–3 kW offline power supplies: boost PFC stages, two-switch forward converters, and LLC resonant half-bridges. The through-hole TO-220-3 package with a metal tab means you can bolt it to a chassis or heatsink with a thermal pad or mica insulator — the 162 W power dissipation rating assumes the case is held at 25 °C, so the actual heatsink must be sized to keep the case temperature below about 110 °C at full load.","metaTitle":"IPP60R060C7XKSA1 CoolMOS™ C7 N-Channel MOSFET, 600 V, 35 A","metaDescription":"Infineon IPP60R060C7XKSA1 N-channel 600 V 35 A MOSFET in TO-220-3. 60 mOhm Rds(on) at 10 V, 68 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™ C7","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ C7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 800µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"60mOhm @ 15.9A, 10V","Power Dissipation (Max)":"162W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"68 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2850 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"35A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$8.24","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$10.42000","currency":"USD"},{"qty":10,"price":"$9.41300","currency":"USD"},{"qty":100,"price":"$7.79310","currency":"USD"},{"qty":500,"price":"$6.78616","currency":"USD"},{"qty":1000,"price":"$5.91052","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/813620f7e9e324901c0cd448d46cafb5.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the IPP60R060C7XKSA1?","answer":"This is the value used for conduction-loss calculations in the power stage."},{"question":"What is the gate charge and what does it mean for switching frequency?","answer":"Total gate charge is 68 nC at a 10 V gate drive. For a 100 kHz switching frequency, the average gate-drive current required is about 6.8 mA — well within the capability of most dedicated MOSFET drivers. The 2850 pF input capacitance at 400 V drain-source also contributes to the switching loss, so the total gate-drive power is roughly Qg × Vgs × fsw."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP60R060C7XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP60R060C7XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}