{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP50R520CP","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP50R520CP","canonicalUrl":"https://icboms.com/infineon/IPP50R520CP","factsUrl":"https://icboms.com/api/mcp/products/IPP50R520CP","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ series, IPP50R520CP, N-Channel MOSFET, 500 V Vdss, 7.1 A continuous drain, 520 mOhm Rds(on) at 10 V, 17 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C operating junction temperature.","salesMarkdown":"## 500 V CoolMOS N-channel in a TO-220 The device comes in a through-hole TO-220-3 package (PG-TO220-3-1), suited for high-voltage off-line power conversion in switched-mode power supplies, PFC stages, and lighting ballasts. ## Gate charge and switching loss Total gate charge Qg is 17 nC at Vgs = 10 V, and the input capacitance Ciss is 680 pF at Vds = 100 V. These numbers tell a design engineer that the FET can be driven with a modest gate-drive current — 17 nC at 100 kHz switching frequency draws only 1.7 mA from the driver, keeping the gate-drive loss low. ## Thermal and operating range Maximum power dissipation is 66 W at case temperature, with the TO-220 tab providing a direct thermal path to a heatsink — the limiting factor in a real design is the heatsink's thermal resistance, not the die itself.","metaTitle":"Infineon IPP50R520CP CoolMOS N-Channel MOSFET, 500 V, 7.1 A","metaDescription":"Infineon IPP50R520CP CoolMOS N-channel MOSFET: 500 V Vdss, 7.1 A continuous drain, 520 mOhm Rds(on) at 10 V. TO-220-3 through-hole.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"520mOhm @ 3.8A, 10V","Power Dissipation (Max)":"66W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"680 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.1A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.68","stockQuantity":0,"priceTiers":[{"qty":408,"price":"$0.74000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1083345138fdb9629babf45bf0c515a9.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Vds rating of IPP50R520CP?","answer":"The drain-to-source breakdown voltage (Vdss) is 500 V, making this MOSFET suitable for 400 VDC bus applications such as PFC stages and flyback converters."},{"question":"How does IPP50R520CP compare to the surface-mount IPD50R950CEAUMA1?","answer":"The IPD50R950CEAUMA1 is a surface-mount DPAK (TO-252) device from the CoolMOS CE series with a higher 950 mOhm Rds(on) and lower 4.3 A current rating. The IPP50R520CP offers roughly half the on-resistance and 65% more current capacity, but requires a through-hole footprint and a heatsink for full power dissipation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP50R520CP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP50R520CP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}