{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP50R280CEXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP50R280CEXKSA1","canonicalUrl":"https://icboms.com/infineon/IPP50R280CEXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP50R280CEXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPP50R280CEXKSA1, N-Channel Super Junction MOSFET, 500V Vdss, 13A Id, 280mOhm Rds(on), 32.6nC Qg, TO-220-3, -55°C to 150°C.","salesMarkdown":"## 500 V Super Junction MOSFET in TO-220-3 The through-hole TO-220-3 package (PG-TO220-3-1) suits point-of-load power stages, PFC boost stages, and flyback converters where the designer wants a low-inductance source tab and a standard three-pin layout for heatsink mounting. ## 280 mOhm on-resistance and 32.6 nC gate charge Maximum on-resistance is 280 mOhm at 4.2 A drain current with 13 V gate drive — the 13 V drive voltage is the recommended bias for minimum Rds(on) and matches the output of common PWM controller gate drivers. Total gate charge is 32.6 nC at 10 V, which means a 100 kHz hard-switched stage draws roughly 3.3 mA from the gate driver — well within the capability of a standard 1 A totem-pole driver, and the 773 pF input capacitance at 100 V Vds keeps the Miller plateau manageable for the feedback compensation loop. ## Junction temperature range and thermal budget Maximum power dissipation is 92 W at case temperature Tc — the TO-220 tab soldered to a copper island or bolted to a heatsink with thermal compound keeps the junction below 150°C at the 13 A continuous rating.","metaTitle":"Infineon IPP50R280CEXKSA1 CoolMOS N-Ch MOSFET","metaDescription":"Infineon IPP50R280CEXKSA1 CoolMOS N-channel 500V 13A MOSFET in TO-220-3. 280mOhm Rds(on) at 13V gate drive, 32.6nC gate charge.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"Super Junction","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 350µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 4.2A, 13V","Power Dissipation (Max)":"92W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"32.6 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"773 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"13A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.51","stockQuantity":0,"priceTiers":[{"qty":448,"price":"$0.67000","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/IPx50R280CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301384ce20ea743c7","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPP50R280CEXKSA1?","answer":"The 13 V drive voltage is the specified bias for minimum Rds(on); operating at lower gate voltages increases on-resistance per the typical transfer curve in the datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP50R280CEXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP50R280CEXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}