{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP50R199CPXK","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP50R199CPXK","canonicalUrl":"https://icboms.com/infineon/IPP50R199CPXK","factsUrl":"https://icboms.com/api/mcp/products/IPP50R199CPXK","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPP50R199CPXK, N-Channel MOSFET, 500 V Vdss, 17 A Id, 199 mOhm Rds(on) @ 10 V, 45 nC Qg, TO-220-3, -55 to 150 °C.","salesMarkdown":"The 139 W package dissipation limit provides derating headroom for a properly heatsunk assembly. ## Temperature range and package The TO-220-3 (PG-TO220-3-1) footprint accepts standard heatsink clips and spring clamps; the exposed metal tab carries the drain potential, so insulating bushings or thermal pads are required for shared-heatsink layouts. Gate drive is specified at 10 V for the rated Rds(on); the ±20 V Vgs maximum allows headroom for ringing on long gate traces.","metaTitle":"Infineon IPP50R199CPXK CoolMOS N-Channel MOSFET","metaDescription":"Infineon IPP50R199CPXK CoolMOS N-Channel MOSFET: 500V Vdss, 17A Id, 199mOhm Rds(on), TO-220-3. Active production.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 660µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"199mOhm @ 9.9A, 10V","Power Dissipation (Max)":"139W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1800 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.87","priceTiers":[{"qty":161,"price":"$1.87000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5ac83ab9692936e0f99e4895be453b76.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPP50R199CPXK/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the IPP50R199CPXK?","answer":"The maximum on-resistance is 199 mOhm at 10 V gate drive and 9.9 A drain current. This is the value used for conduction loss calculations in the power stage."},{"question":"What are the alternatives to the IPP50R199CPXK in the CoolMOS family?","answer":"The CoolMOS CP series includes 500 V devices in the same TO-220-3 footprint at different Rds(on) levels — lower resistance parts for higher efficiency, higher resistance parts for cost-sensitive designs. The IPP50R199CPXK is the 199 mOhm variant in that range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP50R199CPXK","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP50R199CPXK when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-13T21:05:34.174Z","lastPublished":"2026-07-13T21:05:34.174Z","indexable":true}}